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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to LSI /
Describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Somerset :
Wiley,
2016.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
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| 245 | 0 | 0 | |a Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : |b Application to LSI / |c edited by Shunpei Yamazaki and Masahiro Fujita. |
| 260 | |a Somerset : |b Wiley, |c 2016. | ||
| 300 | |a 1 online resource (380 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Title Page ; Copyright; Contents; About the Editors; List of Contributors ; Series Editor's Foreword ; Preface; Acknowledgments; Chapter 1 Introduction; 1.1 Overview of this Book; 1.2 Background; 1.2.1 Typical Characteristics of CAAC-IGZO FETs; 1.2.2 Possible Applications of CAAC-IGZO FETs; 1.3 Summary of Each Chapter; References; Chapter 2 Device Physics of CAAC-IGZO FET ; 2.1 Introduction; 2.2 Off-State Current; 2.2.1 Off-State Current Comparison between Si and CAAC-IGZO FETs; 2.2.2 Measurement of Extremely Low Off-State Current; 2.2.3 Theoretical Discussion with Energy Band Diagram. | |
| 505 | 8 | |a 2.2.4 Conclusion2.3 Subthreshold Characteristics; 2.3.1 Estimation of Icut by SS; 2.3.2 Extraction Method of Interface Levels; 2.3.3 Reproduction of Measured Value and Estimation of Icut; 2.3.4 Conclusion; 2.4 Technique for Controlling Threshold Voltage (Vth); 2.4.1 Vth Control by Application of Back-Gate Bias; 2.4.2 Vth Control by Formation of Circuit for Retaining Back-Gate Bias; 2.4.3 Vth Control by Charge Injection into the Charge Trap Layer; 2.4.4 Conclusion; 2.5 On-State Characteristics; 2.5.1 Channel-Length Dependence of Field-Effect Mobility; 2.5.2 Measurement of Cut-off Frequency. | |
| 505 | 8 | |a 2.5.3 Summary2.6 Short-Channel Effect; 2.6.1 Features of S-ch CAAC-IGZO FETs; 2.6.2 Effect of S-ch Structure; 2.6.3 Intrinsic Accumulation-Mode Device; 2.6.4 Dielectric Anisotropy; 2.6.5 Numerical Calculation of the Band Diagrams in IGZO FETs; 2.6.6 Summary; 2.7 20-nm-Node CAAC-IGZO FET; 2.7.1 TGSA CAAC-IGZO FET; 2.7.2 Device Characteristics; 2.7.3 Memory-Retention Characteristics; 2.7.4 Summary; 2.8 Hybrid Structure; 2.8.1 TGTC Structure; 2.8.2 TGSA Structure; 2.8.3 Hybrid Structure; Appendix: Comparison between CAAC-IGZO and Si; References; Chapter 3 NOSRAM ; 3.1 Introduction. | |
| 505 | 8 | |a 3.2 Memory Characteristics3.3 Application of CAAC-IGZO FETs to Memory and their Operation; 3.4 Configuration and Operation of NOSRAM Module; 3.4.1 NOSRAM Module; 3.4.2 Setting Operational Voltage of NOSRAM Module; 3.4.3 Operation of NOSRAM Module; 3.5 Multilevel NOSRAM; 3.5.1 4-Level (2 Bits/Cell) NOSRAM Module; 3.5.2 8-Level (3 Bits/Cell) NOSRAM Module; 3.5.3 16-Level (4 Bits/Cell) NOSRAM Module; 3.5.4 Stacked Multilevel NOSRAM; 3.6 Prototype and Characterization; 3.6.1 2-Level NOSRAM; 3.6.2 4-Level NOSRAM; 3.6.3 8-Level NOSRAM; 3.6.4 16-Level NOSRAM; 3.6.5 Comparison of Prototypes. | |
| 504 | |a ReferencesChapter 4 DOSRAM; 4.1 Introduction; 4.2 Characteristics and Problems of DRAM; 4.3 Operations and Characteristics of DOSRAM Memory Cell; 4.4 Configuration and Basic Operation of DOSRAM; 4.4.1 Circuit Configuration and Operation of DOSRAM; 4.4.2 Hybrid Structure of DOSRAM; 4.5 Operation of Sense Amplifier; 4.5.1 Writing Operation; 4.5.2 Reading Operation; 4.6 Characteristic Measurement; 4.6.1 Writing Characteristics; 4.6.2 Reading Characteristics; 4.6.3 Data-Retention Characteristics; 4.6.4 Summary of 8-kbit DOSRAM; 4.7 Prototype DOSRAM Using 60-nm Technology Node. | ||
| 500 | |a 4.7.1 Configuration of Prototype. | ||
| 520 | 8 | |a Describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. |b This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Semiconductors |x Characterization. | |
| 650 | 0 | |a Gallium compounds. | |
| 650 | 0 | |a Zinc compounds. | |
| 650 | 0 | |a Oxides. | |
| 650 | 0 | |a Integrated circuits |x Large scale integration |x Materials. | |
| 650 | 2 | |a Zinc Compounds | |
| 650 | 2 | |a Oxides | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux. | |
| 650 | 6 | |a Semi-conducteurs |x Caractérisation. | |
| 650 | 6 | |a Gallium |x Composés. | |
| 650 | 6 | |a Zinc |x Composés. | |
| 650 | 6 | |a Oxydes. | |
| 650 | 6 | |a Circuits intégrés à grande échelle |x Matériaux. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Gallium compounds |2 fast | |
| 650 | 7 | |a Oxides |2 fast | |
| 650 | 7 | |a Semiconductors |x Characterization |2 fast | |
| 650 | 7 | |a Semiconductors |x Materials |2 fast | |
| 650 | 7 | |a Zinc compounds |2 fast | |
| 700 | 1 | |a Yamazaki, Shunpei, |e editor. | |
| 700 | 1 | |a Fujita, Masahiro. | |
| 758 | |i has work: |a Physics and technology of crystalline oxide semiconductor CAACO (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFTwY83h6mVBD7fYmvy68C |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Yamazaki, Shunpei. |t Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to LSI. |d Somerset : Wiley, ©2016 |z 9781119247340 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=4727842 |z Texto completo |
| 936 | |a BATCHLOAD | ||
| 938 | |a Askews and Holts Library Services |b ASKH |n AH30712664 | ||
| 938 | |a Askews and Holts Library Services |b ASKH |n AH30712663 | ||
| 938 | |a EBL - Ebook Library |b EBLB |n EBL4727842 | ||
| 938 | |a EBSCOhost |b EBSC |n 1403949 | ||
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| 994 | |a 92 |b IZTAP | ||