Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to LSI /

Describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Yamazaki, Shunpei (Editor ), Fujita, Masahiro
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Somerset : Wiley, 2016.
Temas:
Semiconductors > Materials.
Semiconductors > Characterization.
Gallium compounds.
Zinc compounds.
Oxides.
Integrated circuits > Large scale integration > Materials.
Zinc Compounds
Oxides
Semi-conducteurs > Matériaux.
Semi-conducteurs > Caractérisation.
Gallium > Composés.
Zinc > Composés.
Oxydes.
Circuits intégrés à grande échelle > Matériaux.
TECHNOLOGY & ENGINEERING > Mechanical.
Gallium compounds
Semiconductors > Characterization
Semiconductors > Materials
Zinc compounds
Acceso en línea:Texto completo
Descripción
Sumario:Describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits.
Notas:4.7.1 Configuration of Prototype.
Descripción Física:1 online resource (380 pages)
Bibliografía:ReferencesChapter 4 DOSRAM; 4.1 Introduction; 4.2 Characteristics and Problems of DRAM; 4.3 Operations and Characteristics of DOSRAM Memory Cell; 4.4 Configuration and Basic Operation of DOSRAM; 4.4.1 Circuit Configuration and Operation of DOSRAM; 4.4.2 Hybrid Structure of DOSRAM; 4.5 Operation of Sense Amplifier; 4.5.1 Writing Operation; 4.5.2 Reading Operation; 4.6 Characteristic Measurement; 4.6.1 Writing Characteristics; 4.6.2 Reading Characteristics; 4.6.3 Data-Retention Characteristics; 4.6.4 Summary of 8-kbit DOSRAM; 4.7 Prototype DOSRAM Using 60-nm Technology Node.
ISBN:9781119247425
111924742X
9781119247432
1119247438

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