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An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications /
This book has been designed as a result of the author's teaching experiences; students in the courses came from various disciplines and it was very difficult to prescribe a suitable textbook, not because there are no books on these topics, but because they are either too exhaustive or very elem...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken, New Jersey : Beverly, Massachusetts :
John Wiley & Sons ; Scrivener Publishing,
2016.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Sharon, Maheshwar, |e author. | |
| 245 | 1 | 3 | |a An introduction to the physics and electrochemistry of semiconductors : |b fundamentals and applications / |c Maheshwar Sharon. |
| 264 | 1 | |a Hoboken, New Jersey : |b John Wiley & Sons ; |a Beverly, Massachusetts : |b Scrivener Publishing, |c 2016. | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 505 | 0 | |6 880-01 |a Cover; Title Page; Copyright Page; Dedication; Contents; Foreword; Preface; 1 Our Universe and the Sun; 1.1 Formation of the Universe; 1.2 Formation of Stars; 1.2.1 Formation of Energy in the Sun; 1.2.2 Description of the Sun; 1.2.3 Transfer of Solar Rays through the Ozone Layer; 1.2.4 Transfer of Solar Layers through Other Layers; 1.2.5 Effect of Position of the Sun vis-à-vis the Earth; 1.2.6 Distribution of Solar Energy; 1.2.7 Solar Intensity Calculation; 1.3 Summary; Reference; 2 Solar Energy and Its Applications; 2.1 Introduction to a Semiconductor; 2.2 Formation of a Compound. | |
| 505 | 8 | |a 2.2.1 A Classical Approach2.2.2 Why Call It a Band and Not a Level?; 2.2.3 Quantum Chemistry Approach; 2.2.3.1 Wave Nature of an Electron in a Fixed Potential; 2.2.3.2 Wave Nature of an Electron under a Periodically Changing Potential; 2.2.3.3 Concept of a Forbidden Gap in a Material; 2.2.4 Band Model to Explain Conductivity in Solids; 2.2.4.1 Which of the Total Electrons Will Accept the External Energy for Their Excitation?; 2.2.4.2 Density of States; 2.2.4.3 How Do We Find the Numbers of Electrons in These Bands?; 2.2.5 Useful Deductions; 2.2.5.1 Extrinsic Semiconductor. | |
| 505 | 8 | |a 2.2.5.2 Role of Dopants in the Semiconductor2.3 Quantum Theory Approach to Explain the Effect of Doping; 2.3.1 A Mathematical Approach to Understanding This Problem; 2.3.2 Representation of Various Energy Levels in a Semiconductor; 2.4 Types of Carriers in a Semiconductor; 2.4.1 Majority and Minority Carriers; 2.4.2 Direction of Movement of Carriers in a Semiconductor; 2.5 Nature of Band Gaps in Semiconductors; 2.6 Can the Band Gap of a Semiconductor Be Changed?; 2.7 Summary; Further Reading; 3 Theory of Junction Formation; 3.1 Flow of Carriers across the Junction. | |
| 505 | 8 | |a 3.1.1 Why Do Carriers Flow across an Interface When n- and p-Type Semiconductors Are Joined Together with No Air Gap?3.1.2 Does the Vacuum Level Remain Unaltered, and What Is the Significance of Showing a Bend in the Diagram?; 3.1.3 Why Do We Draw a Horizontal or Exponential Line to Represent the Energy Level in the Semiconductor with a Long Line?; 3.1.4 What Are the Impacts of Migration of Carriers toward the Interface?; 3.2 Representing Energy Levels Graphically; 3.3 Depth of Charge Separation at the Interface of n- and p-Type Semiconductors; 3.4 Nature of Potential at the Interface. | |
| 505 | 8 | |a 3.4.1 Does Any Current Flow through the Interface?3.4.2 Effect of Application of External Potential to the p:n Junction Formed by the Two Semiconductors; 3.4.2.1 Flow of Carriers from n-Type to p-Type; 3.4.2.2 Flow of Carriers from p-Type to n-Type; 3.4.2.3 Flow of Current due to Holes; 3.4.2.4 Flow of Current due to Electrons; 3.4.3 What Would Happen If Negative Potential Were Applied to a p-Type Semiconductor?; 3.4.3.1 Flow of Majority Carriers from p- to n-Type Semiconductors; 3.4.3.2 Flow of Majority Carriers from n- to p-Type. | |
| 520 | |a This book has been designed as a result of the author's teaching experiences; students in the courses came from various disciplines and it was very difficult to prescribe a suitable textbook, not because there are no books on these topics, but because they are either too exhaustive or very elementary. This book, therefore, includes only relevant topics in the fundamentals of the physics of semiconductors and of electrochemistry needed for understanding the intricacy of the subject of photovoltaic solar cells and photoelectrochemical (PEC) solar cells. The book provides the basic concepts of semiconductors, p:n junctions, PEC solar cells, electrochemistry of semiconductors, and photochromism. Researchers, engineers and students engaged in researching/teaching PEC cells or knowledge of our sun, its energy, and its distribution to the earth will find essential topics such as the physics of semiconductors, the electrochemistry of semiconductors, p:n junctions, Schottky junctions, the concept of Fermi energy, and photochromism and its industrial applications. "The topics in this book are explained with clear illustration and indispensable terminology. It covers both fundamental and advanced topics in photoelectrochemistry and I believe that the content presented in this monograph will be a resource in the development of both academic and industrial research". Professor Akira Fujishima, President, Tokyo University of Science, and Director, Photocatalysis International Research Center, Tokyo University of Science, Japan. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Semiconductors |x Electric properties. | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux. | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |x Electric properties |2 fast | |
| 650 | 7 | |a Semiconductors |x Materials |2 fast | |
| 758 | |i has work: |a An introduction to the physics and electrochemistry of semiconductors (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFX7Td4wkyvQd8jTFgwHRX |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |z 9781119274339 |z 1119274338 |w (DLC) 2016032971 |w (OCoLC)936344705 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=4690033 |z Texto completo |
| 880 | 8 | |6 505-00/(S |a 4.1. Effect of Light on the Depletion Layer of the Semiconductor[--]Electrolyte Junction -- 4.1.1. Origin of Photopotential -- 4.1.2. Origin of Photocurrent -- 4.2. The Fate of Photogenerated Carriers -- 4.3. Magnitude of the Photocurrent -- 4.4. Gartner Model for Photocurrent -- 4.4.1. Photocurrent due to Photogenerated Carriers in the Space Charge Region -- 4.4.2. Photocurrent due to Photogenerated Carriers in the Diffusion Region -- 4.4.3. Application of the Gartner Model -- 4.4.4. When α Is Constant -- 4.4.5. When w Is Kept Constant -- 4.4.6. Lifetime of Carriers and Their Mobility -- 4.5. Carrier Recombination -- 4.5.1. Significance of the Lifetime of Carriers -- 4.5.2. Effect of Recombination Center on the Magnitude of Photocurrent -- 4.5.3. Origin of Recombination Centers -- 4.6.A Mathematical Treatment for the Lifetime of Carriers -- 4.7. Effect of Illumination on Fermi Level-Quasi Fermi Level -- 4.8. Solar Cell Performance. | |
| 880 | 8 | |6 505-00/(S |a 4.9. Current[--]Voltage Characteristics of a Solar Cell -- 4.10. The Equivalent Circuit of a Solar Cell -- 4.11. Solar Cell Efficiency -- 4.11.1. Absorption Efficiency αλ -- 4.11.2. Generation Efficiency gλ -- 4.11.3. Collection Efficiency Cλ -- 4.11.4. Current Efficiency Qλ -- 4.11.5. Voltage Factor and Fill Factor -- 4.11.6. Analytical Methods for J-V Characteristics of a Solar Cell -- 4.11.7. Back Wall Cell -- 4.12. Ohmic Contact -- 4.13. Defects in Solids -- 4.13.1. Bulk Defects -- 4.13.2. Surface Structure -- 4.14. Summary -- Further Reading -- References -- 5.1. What Is a Metal-- 5.2. What Is the Structure of Electrolyte and Water Molecules in an Aqueous Solution-- 5.3. What Happens When a Metal Is Immersed in Solution-- 5.4. Existence of a Double Layer Near the Metal-Electrolyte Interface -- 5.5. Influence of Concentration of Electrolyte on Helmholtz and Diffusion Potentials. | |
| 880 | 8 | |6 505-00/(S |a 3.4.3.1. Flow of Majority Carriers from p- to n-Type Semiconductors -- 3.4.3.2. Flow of Majority Carriers from n- to p-Type -- 3.4.3.3. Flow of Minority Carrier from p- to n-Type Semiconductors -- 3.4.3.3. Flow of Minority Carriers from n- to p-Type Semiconductors -- 3.5. Expression for Saturation (or Exchange) Current I0 -- 3.5.1. Factors on Which Diffusion Length Depends -- 3.6. Contact Potential θ -- 3.7. Width of the Space Charge Region -- 3.8. Metal-Schottky Junction -- 3.8.1. Current-Voltage Characteristics for Metal-Schottky Junctions -- 3.8.2. Saturation Current for Metal-Schottky Junctions -- 3.9. Effect of Light on p:n Junctions -- 3.10. Factors to Be Considered in Illuminating the p:n Junction -- 3.10.1. Grids for Collecting the Charges -- 3.10.2. Ohmic Contact on the Back Side of the Junction -- 3.11. Types of p:n Junctions -- 3.12.A Photoelectrochemical Cell -- 3.13. Summary -- Further Reading. | |
| 880 | 8 | |6 505-01/(S |a 5.6. Impact of Charge Accumulation at Various Regions -- 5.7. Electron Transfer and Its Impact on Potential Barrier -- 5.8. Butler-Volmer Approach to Electrochemical Reaction -- 5.9. Significance of Symmetry Factor β -- 5.10. Electrochemical Corrosion at the Metal-Electrolyte Interface -- 5.11. Summary -- Further Reading -- References -- 6.1. Difference between Metal and Semiconductor -- 6.1.1. Hydration of Electrolytes -- 6.1.2. Effect of Hydrogen Bond -- 6.2. Gaussian Distribution of the Potential Energy of Electrolytes -- 6.3. Capacitance at the Semiconductor-Electrolyte Interface -- 6.4. Stability of the Semiconductor -- 6.5. Modifying the Surface of Low Band Gap Materials -- 6.6. Summary -- References -- 7.1. Types of AC Circuits -- 7.2. Significance of Vector Analysis -- 7.3. Impedance Measurement Techniques -- 7.3.1. Audio Frequency Bridges -- 7.3.2. Transformer Ratio Arms Bridge -- 7.3.3. Berberian-Cole Bridge Technique -- 7.3.4. Potentiostatic Measurement. | |
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