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Tunnel field-effect transistors (TFET) : modelling and simulations /
"This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit sim...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken :
Wiley,
2016.
|
| Edición: | 1. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | EBOOKCENTRAL_ocn958205575 | ||
| 003 | OCoLC | ||
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| 006 | m o d | ||
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| 008 | 160908s2016 nju ob 001 0 eng | ||
| 010 | |a 2016041464 | ||
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| 084 | |a TEC008090 |2 bisacsh | ||
| 049 | |a UAMI | ||
| 100 | 1 | |a Kumar, Mamidala Jagadesh, |e author. | |
| 245 | 1 | 0 | |a Tunnel field-effect transistors (TFET) : |b modelling and simulations / |c Jagadesh Kumar Mamidala, Rajat Vishnoi and Pratyush Pandey. |
| 250 | |a 1. | ||
| 264 | 1 | |a Hoboken : |b Wiley, |c 2016. | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b n |2 rdamedia | ||
| 338 | |a online resource |b nc |2 rdacarrier | ||
| 520 | |a "This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"-- |c Provided by publisher. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record and CIP data provided by publisher. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Tunnel field-effect transistors. | |
| 650 | 0 | |a Integrated circuits |x Design and construction. | |
| 650 | 0 | |a Nanostructured materials. | |
| 650 | 0 | |a Low voltage integrated circuits. | |
| 650 | 6 | |a Transistors à effet tunnel. | |
| 650 | 6 | |a Circuits intégrés |x Conception et construction. | |
| 650 | 6 | |a Nanomatériaux. | |
| 650 | 6 | |a Circuits intégrés à faible consommation. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Integrated circuits |x Design and construction |2 fast | |
| 650 | 7 | |a Low voltage integrated circuits |2 fast | |
| 650 | 7 | |a Nanostructured materials |2 fast | |
| 650 | 7 | |a Tunnel field-effect transistors |2 fast | |
| 700 | 1 | |a Vishnoi, Rajat, |e author. | |
| 700 | 1 | |a Pandey, Pratyush, |e author. | |
| 758 | |i has work: |a Tunnel field-effect transistors (TFET) (Text) |1 https://id.oclc.org/worldcat/entity/E39PCXFvvmw4TFYwdqthY9yBXH |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Kumar, Mamidala Jagadesh. |t Tunnel field-effect transistors (TFET). |b 1. |d Hoboken : Wiley, 2016 |z 9781119246299 |w (DLC) 2016023165 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=4698013 |z Texto completo |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL4698013 | ||
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