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Active-Matrix Organic Light-Emitting Display Technologies.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Sharjah :
Bentham Science Publishers,
2014.
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| Colección: | Frontiers in Electrical Engineering.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- PREFACE ; LIST OF CONTRIBUTORS ; Introduction to Organic Light-Emitting Display Technologies ; INTRODUCTION; DEVELOPEMNT HISTORY OF OLEDS; BASIC PHYSICS OF OLEDS; Charge Carriers Injection; Charge Carriers Transportation ; Exciton Formation and Recombination ; Light Extraction from Devices ; FABRICATION AND CHARACTERIZATION OF OLEDS; APPLICATION OF OLEDS; Flat Panel Display; Solid-state Lighting; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; White Organic Light-Emitting Diodes for Display and Lighting Application ; WOLEDS FOR FULL COLOR DISPLAYS; WOLEDS FOR SOLID-STATE LIGHTING.
- APPROACHES TO WHITE LIGHT EMISSIONMulti-emissive Layers; Single-emissive Layer; WOLEDs with Fluorescent-phosphorescent Hybrid Emitters ; Tandem WOLEDs; Side by Side WOLEDs; Color Converted WOLEDs; Excimer/Exciplex WOLEDs; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; Light Outcoupling Technologies ; INTRODUCTION; LIGHT DISTRIBUTION IN OLED; EXTERNAL EXTRACTION STRUCTURES; Truncated Square-pyramid Luminaire; Scattering Film; Sand-blasting Substrate; Microlens Array; INTERNAL EXTRACTION STRUCTURES; Internal Scattering Layer; Photonic Crystal Structure; Metal Nanoparticles; CONCLUSION.
- CONFLICT OF INTERESTACKNOWLEDGEMENTS; REFERENCES; Encapsulation Technologies ; INTRODUCTION; DARK SPOTS FORMATION MECHANISM; REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES; TRADITIONAL ENCAPSULATION TECHNOLOGY; THIN FILM ENCAPSUTION TECHNOLOGY; Si3N4/SiO2 Multilayer; Organic/Inorganic Multilayer; Atomic Layer Deposited (ALD) Film; CONCLUSION; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Thin Film Transistor Technology ; INTRODUCTION; HISTORY OF THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY; LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY.
- SPC TechnologyMIC Technology; ELA Technology; Bridge Grain Technology; METAL OXIDE SEMICONDUCTOR TFTS; Zinc Oxide TFTs; Amorphous Oxide Semiconductors and TFTs; Zinc Tin Oxide; Indium Gallium Oxide; Indium Gallium Zinc Oxide; GaN TFTs; MoS2 TFTs; SUMMARY ; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Driving Schemes and Design Considerations for AMOLED ; CIRCUIT FUNDAMENTALS ; Resistor-Capacitor Circuit; Charging and Discharging RC Circuit; Capacitive Parasitics; TFT CIRCUIT CONSIDERATIONS; Operational Region; Transistor as a Switch; Transistor as a Current Source or Current Drain.
- On ResistanceApproximation of TFT with an equivalent resistance; DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE; Brightness; Display Timing; Pixel Storage Capacitance; Design Expression; TFT CIRCUIT DESIGN TECHNIQUES; Bootstrap Circuit; CIRCUIT COMPENSATION AND LAYOUT DESIGN; CHALLENGE IN AMOLED DISPLAYS; Aging of OLED and TFT ; Threshold Voltage Shift; 2T1C Pixel Configuration; THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL; 3T1C Pixel Configuration; 4T1C Pixel Configuration; 5T2C Pixel Configuration; 6T1C Pixel Configuration; 6T1C Pixel Configuration with biased discharge method.