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160206s2005 vtu o 000 0 eng d |
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|a 9780080477091
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|a 0080477097
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|a DEBBG
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|a (OCoLC)936903375
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|a TK7888.4 ǂb Y36 2005eb
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|a 621.39732
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|a UAMI
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|a Yanda, Richard F.
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|a Demystifying Chipmaking.
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|a Burlington :
|b Elsevier Science,
|c 2005.
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|a 1 online resource (278 pages)
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
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|a Print version record.
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|a Front Cover; Disclaimer ; Demystifying Chipmaking; Copyright Page; Contents; Foreword ; Acknowldgments ; About the Authors; What's on the CD-ROM?; Chapter 1. IC Fabrication Overview; Section 1. Introduction; Section 2. Support Technologies; Section 3. Integrated Circuit fabrication; Section 4. Test and Assembly; Section 5. Summary; Chapter 2. Support Technologies; Section 1. Introduction; Section 2. Contamination Control; Section 3. Crystal Growth and Wafer Preparation; Section 4. Circuit Design; Section 5. Photomask and Reticle Preparation; Chapter 3. Forming Wells; Section 1. Introduction.
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|a Section 2. Initial OxidationSection 3. Photolithography; Section 4. Ion Implantation; Chapter 4. Isolate Active Areas (Shallow Trench Isolation); Section 1. Introduction to Shallow Trench Isolation; Section 2. Pad Oxide Growth; Section 3. Silicon Nitride Deposition; Section 4. Photolithography for Photo/Etch; Section 5. Hard Mask Formation Using Plasma Etch; Section 6. Form Trenches in Silicon with Plasma Etch; Section 7. Fill Trenches with Silicon Dioxide; Section 8. Chemical Mechanical Polishing (CMP) to Remove Excess Dioxide; Section 9. Wet Etch Removal of Silicon Nitride and Pad Oxide.
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|a Chapter 5. Building the TransistorsSection 1. Introduction; Section 2. Thin Film Formation; Section 3. Poly Gate Formation; Section 4. Source/Drain Formation; Section 5. Salicide Formation; Chapter 6. First Level Metallization; Section 1. Introduction; Section 2. Nitride and Oxide Depositions ; Section 3. CMP Planarization; Section 4. Photo/Etch for Contact Holes; Section 5. Tungsten Plug Process; Section 6. Low-k Dielectric Process; Section 7. Copper First Level Interconnection Process; Chapter 7. Multilevel Metal Interconnects and Dual Damascene; Section 1. Introduction.
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|a Section 2. Deposit Barrier Layer and lntermetal DielectricSection 3. Dual Damascene Process; Section 4. Form Bonding Pads; Section 5. Final Passivation Process; Chapter 8. Test and Assembly; Section 1. Introduction; Section 2. Wafer and Chip Testing; Section 3. Assembly and Packaging; Appendix A. Science Overview; Introduction; Section 1. Atoms and Molecules; Section 2. Gases; Section 3. Chemistry; Section 4. Solids; Section 5. Electricity, Electric and Magnetic Fields; Appendix B. Plasma Etch Supplement to Chapter 4; Section 1. Plasma Etcher Theory.
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|a Section 2. Plasma Etch Process RequirementsBibliography; Index; ELSEVIER SCIENCE CD-ROM LICENSE AGREEMENT.
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|a This book takes the reader through the actual manufacturing process of making a typical chip, from start to finish, including a detailed discussion of each step, in plain language. The evolution of today's technology is added to the story, as seen through the eyes of the engineers who solved some of the problems. The authors are well suited to that discussion since they are three of those same engineers. They have a broad exposure to the industry and its technology that extends all the way back to Shockley Laboratories, the first semiconductor manufacturer in Silicon Valley. The CMOS (Complemen.
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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|a Logic circuits
|x Design and construction.
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|a Metal oxide semiconductors, Complementary.
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|a MOS complémentaires.
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|a Logic circuits
|x Design and construction
|2 fast
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|a Metal oxide semiconductors, Complementary
|2 fast
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|a Heynes, Michael.
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|a Miller, Anne K.
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|i has work:
|a Demystifying chipmaking (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCFJJ7TVTTgpdrpkqb76mHP
|4 https://id.oclc.org/worldcat/ontology/hasWork
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776 |
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|i Print version:
|a Yanda, Richard F.
|t Demystifying Chipmaking.
|d Burlington : Elsevier Science, ©2005
|z 9780750677608
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856 |
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|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=234967
|z Texto completo
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|a ProQuest Ebook Central
|b EBLB
|n EBL234967
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|a 92
|b IZTAP
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