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Compound Semiconductor Bulk Materials And Characterizations.
This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this fie...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
River Edge :
World Scientific Publishing Company,
2007.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 082 | 0 | 4 | |a 537.6 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Oda, Osamu. | |
| 245 | 1 | 0 | |a Compound Semiconductor Bulk Materials And Characterizations. |
| 260 | |a River Edge : |b World Scientific Publishing Company, |c 2007. | ||
| 300 | |a 1 online resource (556 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a PREFACE; PART 1 FUNDAMENTALS; 1 . PHYSICAL PROPERTIES; 1.1 INTRODUCTION; 1.2 COMPOUND SEMICONDUCTORS; 1.3 CRYSTAL STRUCTURE; 1.4 BAND STRUCTURES. BAND GAPS AND LATTICE CONSTANTS; 1.5 OPTICAL PROPERTIES; 1.6 ELECTRICAL PROPERTIES; 1.6.1 Carrier Concentration; 1.6.2 Mobility; 1.6.3 High Field Properties; 1.7 OTHER PROPERTIES; 1.7.1 General Properties; 1.7.2 Stacking Fault Energy; 1.7.3 Critical Resolved Shear Stress; REFERENCES; 2 . CRYSTAL GROWTH METHODS; 2.1 INTRODUCTION; 2.2 MELT GROWTH METHODS; 2.2.1 Horizontal Boat Growth Methods; 2.2.2 Vertical Boat Growth Methods. | |
| 505 | 8 | |a 2.2.3 Pulling Methods2.2.4 Floating Zone (FZ) Method; 2.2.5 Other Methods; 2.3 SOLUTION GROWTH METHODS; 2.3.1 Simple Solution Growth Method; 2.3.2 Traveling Heater Method (THM); 2.3.3 Solute Solution Diffusion (SSD) Method; 2.3.4 Solvent Evaporation (SE) Method; 2.3.5 Temperature Difference Method under Controlled Vapor Pressure (TDM- CVP); 2.3.6 Hydrothermal Synthesis Method; 2.4 VAPOR PHASE GROWTH METHOD; 2.4.1 Direct Synthesis (DS) Method; 2.4.2 Physical Vapor Transport (PVT) Method; 2.4.3 Chemical Vapor Transport (CVT) Method; 2.4.4 Solid Phase Reaction (Solid State Recrystallization). | |
| 505 | 8 | |a 2.5 MODIFICATION OF CRYSTAL GROWTH METHODS2.5.1 In-Situ Synthesis; 2.5.2 Vapor Pressure Control; 2.5.3 Magnetic Field Application; 2.5.4 Accelerated Crucible Rotation Technique (ACRT); REFERENCES; 3 . PRINCIPLES OF CRYSTAL GROWTH; 3.1 INTRODUCTION; 3.2 PHASE DIAGRAM; 3.3 CONVECTION; 3.3.1 Gas Convection; 3.3.2 Melt Convection; 3.3.3 Instability of Melt Convection; 3.3.4 Fluid Flow and CrystaUMelt Interface Shape; 3.4 MAGNETIC FIELD APPLICATION; 3.5 TEMPERATURE DISTRIBUTION AND THERMAL STRESS; 3.6 SEGREGATION AND SUPERCOOLING; 3.6.1 Segregation; 3.6.2 Constitutional Supercooling. | |
| 505 | 8 | |a 3.7 DIAMETER CONTROL SYSTEMREFERENCES; 4 . DEFECTS; 4.1 INTRODUCTION; 4.2 POINT DEFECTS; 4.2.1 Various Point Defects; 4.2.2 Thermodynamics of Point Defects; 4.2.3 Diffusion Constants; 4.2.4 Non-stoichiometry; 4.2.5 Self Compensation; 4.2.6 Defect Control; 4.3 DISLOCATIONS; 4.3.1 Fundamentals of Dislocations; 4.3.2 Thermal Stress and Dislocations; 4.3.3 Necking; 4.3.4 Impurity Hardening; 4.3.5 Lineages and Low Angle Grain Boundaries; 4.4 STACKING FAULT DEFECTS AND TWINS; 4.5 FACETS AND STRIATIONS; 4.6 PRECIPITATES, INCLUSIONS AND VOIDS; REFERENCES; 5 . CHARACTERIZATION; 5.1 INTRODUCTION. | |
| 505 | 8 | |a 5.2 X-RAY DIFFRACTION5.2.1 Orientation Determination; 5.2.2 Multiple Crystal X-ray Diffraction; 5.2.3 X-ray Diffraction Topography; 5.3 ELECTRON IRRADIATION; 5.3.1 Electron Microscopy (TEM); 5.3.2 Electron Beam Induced Current (EBIC); 5.4 OPTICAL CHARACTERIZATION; 5.4.1 Photoluminescence (PL); 5.4.2 Scanning photoluminescence (SPL); 5.4.3 Cathodoluminescence (CL); 5.4.4 IR Transmission Micrography; 5.4.5 IR Scattering Tomography; 5.4.6 Laser Scattering; 5.5 ELECTRICAL PROPERTIES; 5.5.1 Hall Measurement; 5.5.2 C-V Measurement; 5.5.3 Transient Spectroscopies; 5.5.4 Three Guard Electrode Method. | |
| 500 | |a 5.6 impurity and composition analysis. | ||
| 520 | |a This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, inclu. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors | |
| 650 | 6 | |a Composés semi-conducteurs. | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a Compound semiconductors |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 758 | |i has work: |a Compound semiconductor bulk materials and characterizations (Text) |1 https://id.oclc.org/worldcat/entity/E39PCG6DqvhdmrjyFRtVKFwm7d |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Oda, Osamu. |t Compound Semiconductor Bulk Materials And Characterizations. |d River Edge : World Scientific Publishing Company, ©2007 |z 9789810217280 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=312348 |z Texto completo |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL312348 | ||
| 994 | |a 92 |b IZTAP | ||