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Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications /
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Weinheim :
Wiley-VCH,
2016.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Resistive switching : |b from fundamentals of nanoionic redox processes to memristive device applications / |c edited by Daniele Ielmini and Rainer Waser. |
| 264 | 1 | |a Weinheim : |b Wiley-VCH, |c 2016. | |
| 264 | 4 | |c ©2016 | |
| 300 | |a 1 online resource : |b color illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 588 | 0 | |a Online resource; title from PDF title page (EBSCO, viewed January 22, 2016). | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment. | |
| 505 | 8 | |a 5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction. | |
| 505 | 8 | |a 7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References. | |
| 505 | 8 | |a Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming. | |
| 520 | |a With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Memristors. | |
| 650 | 6 | |a Memristances. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Memristores. |2 csicaul | |
| 650 | 7 | |a Nanoelectrónica. |2 csicaul | |
| 650 | 7 | |a Resistencias eléctricas. |2 csicaul | |
| 650 | 7 | |a Memristors |2 fast | |
| 700 | 1 | |a Ielmini, Daniele, |e editor. | |
| 700 | 1 | |a Waser, Rainer, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a Ielmini, Daniele. |t Resistive Switching : From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications. |d : Wiley, ©2015 |z 9783527334179 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=4305742 |z Texto completo |
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