Electrical overstress (EOS) : devices, circuits, and systems /

"Electrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components and systems as technologies scale from micro- to nano-electronics. This bookteaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Voldman, Steven H.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Chichester, West Sussex, United Kingdom : John Wiley & Sons Inc., 2014.
Colección:ESD series.
Temas:
Semiconductors > Failures.
Semiconductors > Protection.
Transients (Electricity)
Overvoltage.
Semi-conducteurs > Défaillances.
Semi-conducteurs > Protection.
Régime transitoire (Électricité)
Surtension.
TECHNOLOGY & ENGINEERING > Electronics > Circuits > General.
Overvoltage
Semiconductors > Failures
Semiconductors > Protection
Régime transitoire (électricité) > Accidents.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Electrical Overstress (EOS): Devices, Circuits and Systems; Contents; About the Author; Preface; Acknowledgements; 1 Fundamentals of Electrical Overstress; 1.1 Electrical Overstress; 1.1.1 The Cost of Electrical Overstress; 1.1.2 Product Field Returns
  • The Percentage that is Electrical Overstress; 1.1.3 Product Field Returns
  • No Defect Found versus Electrical Overstress; 1.1.4 Product Failures
  • Failures in Integrated Circuits; 1.1.5 Classification of Electrical Overstress Events; 1.1.6 Electrical Over-Current; 1.1.7 Electrical Over-Voltage; 1.1.8 Electrical Over-Power.
  • 1.2 De-Mystifying Electrical Overstress1.2.1 Electrical Overstress Events; 1.3 Sources of Electrical Overstress; 1.3.1 Sources of Electrical Overstress in Manufacturing Environment; 1.3.2 Sources of Electrical Overstress in Production Environments; 1.4 Misconceptions of Electrical Overstress; 1.5 Minimization of Electrical Overstress Sources; 1.6 Mitigation of Electrical Overstress; 1.7 Signs of Electrical Overstress Damage; 1.7.1 Signs of Electrical Overstress Damage
  • The Electrical Signature; 1.7.2 Signs of Electrical Overstress Damage
  • The Visual Signature.
  • 1.8 Electrical Overstress and Electrostatic Discharge1.8.1 Comparison of High and Low Current EOS versus ESD Events; 1.8.2 Electrical Overstress and Electrostatic Discharge Differences; 1.8.3 Electrical Overstress and Electrostatic Discharge Similarities; 1.8.4 Comparison of EOS versus ESDWaveforms; 1.8.5 Comparison of EOS versus ESD Event Failure Damage; 1.9 Electromagnetic Interference; 1.9.1 Electrical Overstress Induced Electromagnetic Interference; 1.10 Electromagnetic Compatibility; 1.11 Thermal Over-Stress; 1.11.1 Electrical Overstress and Thermal Overstress.
  • 1.11.2 Temperature Dependent Electrical Overstress1.11.3 Electrical Overstress and Melting Temperature; 1.12 Reliability Technology Scaling; 1.12.1 Reliability Technology Scaling and the Reliability Bathtub Curve; 1.12.2 The Shrinking Reliability Design Box; 1.12.3 The Shrinking Electrostatic Discharge Design Box; 1.12.4 Application Voltage, Trigger Voltage, and Absolute Maximum Voltage; 1.13 Safe Operating Area; 1.13.1 Electrical Safe Operating Area; 1.13.2 Thermal Safe Operating Area; 1.13.3 Transient Safe Operating Area; 1.14 Summary and Closing Comments; References.
  • 2 Fundamentals of EOS Models2.1 Thermal Time Constants; 2.1.1 The Thermal Diffusion Time; 2.1.2 The Adiabatic Regime Time Constant; 2.1.3 The Thermal Diffusion Regime Time Constant; 2.1.4 The Steady State Regime Time Constant; 2.2 Pulse Event Time Constants; 2.2.1 The ESD HBM Pulse Time Constant; 2.2.2 The ESD MM Pulse Time Constant; 2.2.3 The ESD Charged Device Model Pulse Time Constant; 2.2.4 The ESD Pulse Time Constant
  • Transmission Line Pulse; 2.2.5 The ESD Pulse Time Constant
  • Very Fast Transmission Line Pulse; 2.2.6 The IEC 61000-4-2 Pulse Time Constant.

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