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|a 621.38152
|2 23
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|a UAMI
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100 |
1 |
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|a Chen, Jr-Tai,
|e author.
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1 |
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|a MOCVD growth of GaN-based high electron mobility transistor structures /
|c Jr-Tai Chen.
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264 |
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1 |
|a Linköping, Sweden :
|b Linköping University,
|c 2015.
|
264 |
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4 |
|c ©2015
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300 |
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|a 1 online resource (81 pages) :
|b illustrations (some color)
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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1 |
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|a Linköping Studies in Science and Technology Dissertations,
|x 0345-7524 ;
|v Number 1662
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504 |
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|a Includes bibliographical references.
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|a Online resource; title from PDF title page (ebrary, viewed May 5, 2015).
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|a Abstract -- Populärvetenskaplig sammanfattning -- Preface -- Acknowledgement -- Content -- 1 History and challenges -- 2 Properties of III-nitrides -- 3 Fundamentals of GaN-based HEMT structures -- 4 MOCVD growth of GaN-based HEMT structures -- 5 Characterizations of GaN-based HEMT structures -- References -- Publications.
|
590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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650 |
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0 |
|a Semiconductors
|x Materials.
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650 |
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|a Epitaxy.
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6 |
|a Semi-conducteurs
|x Matériaux.
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|a Épitaxie.
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7 |
|a Epitaxy
|2 fast
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7 |
|a Semiconductors
|x Materials
|2 fast
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710 |
2 |
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|a Semiconductor Materials Division.
|b Department of Physics, Chemistry, and Biology.
|b Linköping University,
|e issuing body.
|
758 |
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|i has work:
|a MOCVD growth of GaN-based high electron mobility transistor structures (Text)
|1 https://id.oclc.org/worldcat/entity/E39PD3XCPVJXgDvkK7kyHT4kKq
|4 https://id.oclc.org/worldcat/ontology/hasWork
|
830 |
|
0 |
|a Linköping studies in science and technology.
|p Dissertations ;
|v no. 1662.
|
856 |
4 |
0 |
|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=3328196
|z Texto completo
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936 |
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|a BATCHLOAD
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|a EBL - Ebook Library
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|n ebr11049571
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