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Formation of silicon nitride from the 19th to the 21st century : a comprehensive summary and guide to the world literature /
The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichi...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
[Pfäffikon], Switzerland :
Trans Tech Publications Ltd,
2015.
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| Edición: | Second edition, revised and updated. |
| Colección: | Materials science foundations ;
Volumes 84-85. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Formation of Silicon Nitride from the 19th to the 21st Century; Preface; Table of Contents; Part A: In the Beginning; Part B: Technical Context of Silicon Nitride Formation; Part C: Si3N4 Products, Uses and Markets; Part D: Si3N4 by Reaction of Si(cr) Surfaces and N-Species; Part E: Si3N4 Powder Formation from Si(Powder)/N2(g); Part F: Fabrication of Reaction Bonded Silicon Nitride; Part G: Si3N4 from Si/N2 under Vigorous Conditions; Part H: Si3N4 Formation by Reaction of Si with N-Compounds; Part Í: Si3N4 by Nitridation of Si-O Based Materials.
- Part J: Si3N4 Formation from Si-N Based MaterialsPart K: Comparative Overview and Summary of Si3N4 CVD; Part L: Si3N4 by CVD Nitridation of Si-H Compounds; Part M: Si3N4 by CVD Nitridation of Si Halides and Halosilanes; Part N: Si3N4 Formation in Si-C-N Systems; Part O: Si3N4 Formation in Si-N-X Systems, X = B, P, S, Fe, other.