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Formation of silicon nitride from the 19th to the 21st century : a comprehensive summary and guide to the world literature /

The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichi...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Sangster, Raymond C. (Autor)
Otros Autores: Fisher, David J. (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: [Pfäffikon], Switzerland : Trans Tech Publications Ltd, 2015.
Edición:Second edition, revised and updated.
Colección:Materials science foundations ; Volumes 84-85.
Temas:
Acceso en línea:Texto completo

MARC

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245 1 0 |a Formation of silicon nitride from the 19th to the 21st century :  |b a comprehensive summary and guide to the world literature /  |c Raymond C. Sangster ; updated and revised by David J. Fisher. 
250 |a Second edition, revised and updated. 
264 1 |a [Pfäffikon], Switzerland :  |b Trans Tech Publications Ltd,  |c 2015. 
264 4 |c ©2015 
300 |a 1 online resource (1,001 pages) :  |b illustrations 
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490 1 |a Materials Science Foundations ;  |v Volumes 84-85 
504 |a Includes bibliographical references at the end of each chapters. 
588 0 |a Online resource; title from PDF cover (ebrary, viewed April 25, 2015). 
505 0 |a Formation of Silicon Nitride from the 19th to the 21st Century; Preface; Table of Contents; Part A: In the Beginning; Part B: Technical Context of Silicon Nitride Formation; Part C: Si3N4 Products, Uses and Markets; Part D: Si3N4 by Reaction of Si(cr) Surfaces and N-Species; Part E: Si3N4 Powder Formation from Si(Powder)/N2(g); Part F: Fabrication of Reaction Bonded Silicon Nitride; Part G: Si3N4 from Si/N2 under Vigorous Conditions; Part H: Si3N4 Formation by Reaction of Si with N-Compounds; Part Í: Si3N4 by Nitridation of Si-O Based Materials. 
505 8 |a Part J: Si3N4 Formation from Si-N Based MaterialsPart K: Comparative Overview and Summary of Si3N4 CVD; Part L: Si3N4 by CVD Nitridation of Si-H Compounds; Part M: Si3N4 by CVD Nitridation of Si Halides and Halosilanes; Part N: Si3N4 Formation in Si-C-N Systems; Part O: Si3N4 Formation in Si-N-X Systems, X = B, P, S, Fe, other. 
520 |a The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters. This revised second edition summariz. 
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650 6 |a Nitrure de silicium. 
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