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Formation of silicon nitride from the 19th to the 21st century : a comprehensive summary and guide to the world literature /
The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichi...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
[Pfäffikon], Switzerland :
Trans Tech Publications Ltd,
2015.
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| Edición: | Second edition, revised and updated. |
| Colección: | Materials science foundations ;
Volumes 84-85. |
| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/H), and many related, reaction systems; although Si-O and Si-C are formidable competitors to Si-N. The most favored Si-N compound is stoichiometric Si3N4. It comes in three common varieties. How they interrelate, how one finds them and (above all) how one makes them - and how sometimes they just happen to form - are the subjects of this book, with due attention being paid to closely related matters. This revised second edition summariz. |
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| Descripción Física: | 1 online resource (1,001 pages) : illustrations |
| Bibliografía: | Includes bibliographical references at the end of each chapters. |
| ISBN: | 9783038269014 3038269018 |