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Photonics and Electronics with Germanium.
Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken :
Wiley,
2015.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Title Page; Copyright; Contents; Preface; List of Contributors; Chapter 1 Defects in Germanium; 1.1 Introduction; 1.2 Methods for Studying Defects and Impurities; 1.2.1 Experimental Techniques; 1.2.2 First-Principles Calculations; 1.3 Impurities; 1.3.1 Shallow Dopants; 1.3.2 Hydrogen; 1.4 Intrinsic Defects; 1.4.1 Vacancies; 1.4.1.1 Electronic Structure; 1.4.1.2 Formation Energy; 1.4.1.3 Defect Levels; 1.4.1.4 Comparison with Silicon; 1.4.1.5 Diffusion; 1.4.2 Self-Interstitials; 1.4.3 Dangling Bonds; 1.4.3.1 Electronic Levels; 1.4.4 Impact on Devices; 1.5 Summary; References.
- Chapter 2 Hydrogen in Ge2.1 Introduction; 2.2 Properties of Hydrogen in Ge; 2.2.1 Incorporation of Hydrogen; 2.2.2 Isolated Hydrogen; 2.2.3 Hydrogen Dimers; 2.2.3.1 Interstitial H2; 2.2.3.2 The H2* Defect; 2.2.3.3 H2 Molecules in Hydrogen-Induced Platelets; 2.2.3.4 Complexes of Hydrogen with Other Defects; 2.3 Hydrogen Passivation of Shallow Donors and Acceptors in Ge; 2.3.1 Donor Passivation; 2.3.2 Hydrogen in p-type Ge; 2.3.3 Schottky Contacts on p-type Ge; 2.4 Summary; Acknowledgments; References.
- Chapter 3 Epitaxy of Ge Layers on Blanket and Patterned Si(001) for Nanoelectronics and Optoelectronics3.1 General Introduction; 3.2 Epitaxial Growth of Ge Thick Layers on Si(001); 3.2.1 Growth Protocol and Kinetics; 3.2.2 Surface Morphology; 3.2.3 Strain State; 3.2.4 Defects Density and Distribution in the Ge Layers; 3.3 Ge Surface Passivation with Si; 3.3.1 Passivation Protocol; 3.3.2 Surface and Film Morphology; 3.4 SEG of Ge in Cavities at the End of Optical Waveguides; 3.5 Fabrication, Structural, and Electrical Properties of Compressively Strained Ge-on-Insulator Substrates.
- 3.5.1 The c-Ge on Si0.15Ge0.85 Process Flow3.5.2 Structural Properties of the c-Ge on Si0.15Ge0.85 Stacks as a Function of the Ge Layer Thickness; 3.5.2.1 Surface Morphology; 3.5.2.2 Macroscopic Strain State; 3.5.2.3 Defect Density; 3.5.3 Properties of the c-GeOI Substrates; 3.5.3.1 Structural Properties; 3.5.3.2 Electrical Properties; 3.5.3.3 Benchmark; 3.6 Conclusion and Perspectives; References; Chapter 4 Heavy Doping in Si1-xGex Epitaxial Growth by Chemical Vapor Deposition; 4.1 Introduction; 4.2 In situ Doping of B, P, and C in Si1-x Gex Epitaxial Growth.
- 4.2.1 In situ Doping Characteristics in Si1-xGex Epitaxial Growth4.2.2 Relationship between Carrier and Impurity (B or P) Concentrations in Si1-x-yGexCy Epitaxial Film; 4.3 Atomic-Layer Doping in Si1-xGex Epitaxial Growth; 4.3.1 Boron Atomic-Layer Doping in Si1-xGex Epitaxial Growth; 4.3.1.1 Surface Reaction of B2H6 on Si1-xGex(100); 4.3.1.2 Si1-xGex Epitaxial Growth over B Atomic Layer Already Formed on the (100) Surface; 4.3.2 Phosphorus Atomic-Layer Doping in Si1-xGex Epitaxial Growth; 4.3.2.1 Surface Reaction of PH3 on Si1-xGex(100).