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Radio-frequency integrated-circuit engineering /
"Complementary metal-oxide-semiconductor (CMOS) is a technology for constructing integrated circuits. This book thoroughly discusses the theory, analysis, design, and high-frequency/high-speed characteristics and applications of printed-circuit transmission lines used in integrated circuits and...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken, New Jersey :
Wiley,
[2015]
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Nguyen, Cam, |e author. | |
| 245 | 1 | 0 | |a Radio-frequency integrated-circuit engineering / |c Cam Nguyen. |
| 264 | 1 | |a Hoboken, New Jersey : |b Wiley, |c [2015] | |
| 300 | |a 1 online resource (xviii, 869 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 520 | |a "Complementary metal-oxide-semiconductor (CMOS) is a technology for constructing integrated circuits. This book thoroughly discusses the theory, analysis, design, and high-frequency/high-speed characteristics and applications of printed-circuit transmission lines used in integrated circuits and systems. It discusses applications in all areas of high-frequency technology, including wireless communications, optical engineering, and computers. Accompanied by a solutions manual, this text is ideal for senior and advanced undergraduate students, as well as RF microwave engineers, optical engineers, solid-state device engineers, and computer engineers"-- |c Provided by publisher | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Online resource; title from digital title page (viewed on March 16, 2015). | |
| 505 | 0 | |a Cover -- Contents -- Preface -- Chapter 1 Introduction -- Problems -- Chapter 2 Fundamentals of Electromagnetics -- 2.1 EM Field Parameters -- 2.2 Maxwell's Equations -- 2.3 Auxiliary Relations -- 2.3.1 Constitutive Relations -- 2.3.2 Current Relations -- 2.4 Sinusoidal Time-Varying Steady State -- 2.5 Boundary Conditions -- 2.5.1 General Boundary Conditions -- 2.5.2 Specific Boundary Conditions -- 2.6 Wave Equations -- 2.7 Power -- 2.8 Loss and Propagation Constant in Medium -- 2.9 Skin Depth -- 2.10 Surface Impedance -- Problems -- Chapter 3 Lumped Elements -- 3.1 Fundamentals of Lumped Elements -- 3.1.1 Basic Equations -- 3.2 Quality Factor of Lumped Elements -- 3.3 Modeling of Lumped Elements -- 3.4 Inductors -- 3.4.1 Inductor Configurations -- 3.4.2 Loss in Inductors -- 3.4.3 Equivalent-Circuit Models of Inductors -- 3.4.4 Resonance in Inductors -- 3.4.5 Quality Factor of Inductors -- 3.4.6 High Q Inductor Design Considerations -- 3.5 Lumped-Element Capacitors -- 3.5.1 Capacitor Configurations -- 3.5.2 Equivalent-Circuit Models of Capacitors -- 3.5.3 Resonance -- 3.5.4 Quality Factor -- 3.5.5 High Q Capacitor Design Considerations -- 3.6 Lumped-Element Resistors -- 3.6.1 Resistor Configurations -- 3.6.2 Basic Resistor Equations -- 3.6.3 Equivalent-Circuit Models of Resistors -- References -- Problems -- Chapter 4 Transmission Lines -- 4.1 Essentials of Transmission Lines -- 4.2 Transmission-Line Equations -- 4.2.1 General Transmission-Line Equations -- 4.2.2 Sinusoidal Steady-State Transmission-Line Equations -- 4.3 Transmission-Line Parameters -- 4.3.1 General Transmission Lines -- 4.3.2 Lossless Transmission Lines -- 4.3.3 Low Loss Transmission Lines -- 4.4 Per-Unit-Length Parameters R, L, C, and G -- 4.4.1 General Formulation -- 4.4.2 Formulation for Simple Transmission Lines. | |
| 505 | 8 | |a 4.5 Dielectric and Conductor Losses in Transmission Lines -- 4.5.1 Dielectric Attenuation Constant -- 4.5.2 Conductor Attenuation Constant -- 4.6 Dispersion and Distortion in Transmission Lines -- 4.6.1 Dispersion -- 4.6.2 Distortion -- 4.6.3 Distortion-Less Transmission Lines -- 4.7 Group Velocity -- 4.8 Impedance, Reflection Coefficients, and Standing-Wave Ratios -- 4.8.1 Impedance -- 4.8.2 Reflection Coefficients -- 4.8.3 Standing-Wave Ratio -- 4.8.4 Perfect Match and Total Reflection -- 4.8.5 Lossless Transmission Lines -- 4.9 Synthetic Transmission Lines -- 4.10 Tem and Quasi-Tem Transmission-Line Parameters -- 4.10.1 Static or Quasi-Static Analysis -- 4.10.2 Dynamic Analysis -- 4.11 Printed-Circuit Transmission Lines -- 4.11.1 Microstrip Line -- 4.11.2 Coplanar Waveguide -- 4.11.3 Coplanar Strips -- 4.11.4 Strip Line -- 4.11.5 Slot Line -- 4.11.6 Field Distributions -- 4.12 Transmission Lines in RFICs -- 4.12.1 Microstrip Line -- 4.12.2 Coplanar Waveguide -- 4.12.3 Coplanar Strips -- 4.12.4 Strip Line -- 4.12.5 Slot Line -- 4.12.6 Transitions and Junctions Between Transmission Lines -- 4.13 Multi-Conductor Transmission Lines -- 4.13.1 Transmission-Line Equations -- 4.13.2 Propagation Modes -- 4.13.3 Characteristic Impedance and Admittance Matrix -- 4.13.4 Mode Characteristic Impedances and Admittances -- 4.13.5 Impedance and Admittance Matrix -- 4.13.6 Lossless Multiconductor Transmission Lines -- References -- Problems -- Appendix 4: Transmission-Line Equations Derived From Maxwell's Equations -- Chapter 5 Resonators -- 5.1 Fundamentals of Resonators -- 5.1.1 Parallel Resonators -- 5.1.2 Series Resonators -- 5.2 Quality Factor -- 5.2.1 Parallel Resonators -- 5.2.2 Series Resonators -- 5.2.3 Unloaded Quality Factor -- 5.2.4 Loaded Quality Factor. | |
| 505 | 8 | |a 8.3.2 Ring Hybrid -- 8.3.3 Branch-Line Coupler -- 8.4 Power Dividers -- 8.4.1 Even-Mode Analysis -- 8.4.2 Odd-Mode Analysis -- 8.4.3 Superimposition of Even and Odd Modes -- 8.5 Filters -- 8.5.1 Low Pass Filter -- 8.5.2 High Pass Filter Design -- 8.5.3 Band-Pass Filter Design -- 8.5.4 Band-Stop Filter Design -- 8.5.5 Filter Design Using Impedance and Admittance Inverters -- References -- Problems -- Chapter 9 Fundamentals of CMOS Transistors for RFIC Design -- 9.1 MOSFET Basics -- 9.1.1 MOSFET Structure -- 9.1.2 MOSFET Operation -- 9.2 MOSFET Models -- 9.2.1 Physics-Based Models -- 9.2.2 Empirical Models -- 9.2.3 SPICE Models -- 9.2.4 Passive MOSFET Models -- 9.3 Important MOSFET Frquencies -- 9.3.1 fT -- 9.3.2 fmax -- 9.4 Other Important MOSFET Parameters -- 9.5 Varactor Diodes -- 9.5.1 Varactor Structure and Operation -- 9.5.2 Varactor Model and Characteristics -- References -- Problems -- Chapter 10 Stability -- 10.1 Fundamentals of Stability -- 10.2 Determination of Stable and Unstable Regions -- 10.3 Stability Consideration for N-Port Circuits -- References -- Problems -- Chapter 11 Amplifiers -- 11.1 Fundamentals of Amplifier Design -- 11.1.1 Power Gain -- 11.1.2 Gain Design -- 11.2 Low Noise Amplifiers -- 11.2.1 Noise Figure Fundamentals -- 11.2.2 MOSFET Noise Parameters -- 11.2.3 Noise Figure of Multistage Amplifiers -- 11.2.4 Noise-Figure Design -- 11.2.5 Design for Gain and Noise Figure -- 11.3 Design Examples -- 11.3.1 Unilateral Amplifier Design -- 11.3.2 Bilateral Amplifier Design -- 11.4 Power Amplifiers -- 11.4.1 Power-Amplifier Parameters -- 11.4.2 Power-Amplifier Types -- 11.5 Balanced Amplifiers -- 11.5.1 Differential Amplifiers -- 11.5.2 Ninety-Degree Balanced Amplifiers -- 11.5.3 Push-Pull Amplifiers -- 11.6 Broadband Amplifiers -- 11.6.1 Compensated Matching Networks. | |
| 505 | 8 | |a 11.6.2 Distributed Amplifiers -- 11.6.3 Feedback Amplifiers -- 11.6.4 Cascoded Common-Source Amplifiers -- 11.7 Current Mirrors -- 11.7.1 Basic Current Mirror -- 11.7.2 Cascode Current Mirror -- References -- Problems -- References -- Chapter 12 Oscillators -- 12.1 Principle of Oscillation -- 12.1.1 Oscillation Conditions -- 12.1.2 Oscillation Determination -- 12.2 Fundamentals of Oscillator Design -- 12.2.1 Basic Oscillators -- 12.2.2 Feedback Oscillators -- 12.3 Phase Noise -- 12.3.1 Fundamentals of Phase Noise -- 12.3.2 Phase Noise Modeling -- 12.3.3 Low Phase-Noise Design Consideration -- 12.3.4 Effects of Phase Noise on Systems -- 12.3.5 Analysis Example of Effects of Phase Noise -- 12.4 Oscillator Circuits -- 12.4.1 Cross-Coupled Oscillators -- 12.4.2 Distributed Oscillators -- 12.4.3 Push-Push Oscillators -- References -- Problems -- Chapter 13 Mixers -- 13.1 Fundamentals of Mixers -- 13.1.1 Mixing Principle -- 13.1.2 Mixer Parameters -- 13.2 Mixer Types -- 13.2.1 Single-Ended Mixer -- 13.2.2 Single-Balanced Mixer -- 13.2.3 Double-Balanced Mixer -- 13.2.4 Doubly Double-Balanced Mixer -- 13.3 Other Mixers -- 13.3.1 Passive Mixer -- 13.3.2 Image-Reject Mixer -- 13.3.3 Quadrature Mixer -- 13.3.4 Distributed Mixer -- 13.4 Mixer Analysis and Design -- 13.4.1 Switching Mixer Fundamental -- 13.4.2 Single-Ended Mixer -- 13.4.3 Single-Balanced Mixer -- 13.4.4 Double-Balanced Mixer -- 13.4.5 Source Degeneration in Mixer Design -- 13.5 Sampling Mixer -- 13.5.1 Fundamentals of Sampling -- 13.5.2 Sampling Theory -- 13.5.3 Sampling Process -- 13.5.4 Sample and Hold -- 13.5.5 Sampling Switch -- 13.5.6 Integrated Sampling Mixer -- References -- Problems -- Chapter 14 Switches -- 14.1 Fundamentals of Switches -- 14.1.1 Switch Operation -- 14.1.2 Important Parameters -- 14.2 Analysis of Switching MOSFET. | |
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Radio frequency integrated circuits. | |
| 650 | 6 | |a Circuits intégrés à radiofréquence. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Microwaves. |2 bisacsh | |
| 650 | 7 | |a Radio frequency integrated circuits |2 fast | |
| 758 | |i has work: |a Radio-frequency integrated-circuit engineering (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGbj8VvDQmw9C6fcqH3YT3 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Nguyen, Cam. |t Radio-frequency integrated-circuit engineering. |d Hoboken, New Jersey : Wiley, 2015 |z 9780471398202 |w (DLC) 2014024071 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1895725 |z Texto completo |
| 880 | 8 | |6 505-00/(S |a 5.2.5 Evaluation of and Relation between Unloaded and Loaded Quality Factors -- 5.3 Distributed Resonators -- 5.3.1 Quality-Factor Characteristics -- 5.3.2 Transmission-Line Resonators -- 5.3.3 Waveguide Cavity Resonators -- 5.4 Resonator's Slope Parameters -- 5.5 Transformation of Resonators -- 5.5.1 Impedance and Admittance Inverters -- 5.5.2 Examples of Resonator Transformation -- References -- Problems -- Chapter 6 Impedance Matching -- 6.1 Basic Impedance Matching -- 6.1.1 Smith Chart -- 6.2 Design of Impedance-Matching Networks -- 6.2.1 Impedance-Matching Network Topologies -- 6.2.2 Impedance Transformation through Series and Shunt Inductor and Capacitor -- 6.2.3 Examples of Impedance-Matching Network Design -- 6.2.4 Transmission-Line Impedance-Matching Networks -- 6.3 Kuroda Identities -- References -- Problems -- Chapter 7 Scattering Parameters -- 7.1 Multiport Networks -- 7.2 Impedance Matrix -- 7.3 Admittance Matrix -- 7.4 Impedance and Admittance Matrix in RF Circuit Analysis -- 7.4.1 T-Network Representation of Two-Port RF Circuits -- 7.4.2 π-Network Representation of Two-Port RF Circuits -- 7.5 Scattering Matrix -- 7.5.1 Fundamentals of Scattering Matrix -- 7.5.2 Examples for Scattering Parameters -- 7.5.3 Effect of Reference-Plane Change on Scattering Matrix -- 7.5.4 Return Loss, Insertion Loss, and Gain -- 7.6 Chain Matrix -- 7.7 Scattering Transmission Matrix -- 7.8 Conversion Between Two-Port Parameters -- 7.8.1 Conversion from [Z] to [ABCD] -- References -- Problems -- Chapter 8 RF Passive Components -- 8.1 Characteristics of Multiport RF Passive Components -- 8.1.1 Characteristics of Three-Port Components -- 8.1.2 Characteristics of Four-Port Components -- 8.2 Directional Couplers -- 8.2.1 Fundamentals of Directional Couplers -- 8.2.2 Parallel-Coupled Directional Couplers -- 8.3 Hybrids -- 8.3.1 Hybrid T. | |
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