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Linearization and efficiency enhancement techniques for silicon power amplifiers : from RF to mmW /
This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications....
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
Elsevier,
[2015]
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 082 | 0 | 4 | |a 621.384/12 |2 23 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Kerhervé, Eric, |e author. | |
| 245 | 1 | 0 | |a Linearization and efficiency enhancement techniques for silicon power amplifiers : |b from RF to mmW / |c Eric Kerhervé, Didier Belot. |
| 264 | 1 | |a Amsterdam : |b Elsevier, |c [2015] | |
| 264 | 4 | |c ©2015 | |
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Online resource; title from PDF title page (EBSCO, viewed January 21, 2015). | |
| 504 | |a Includes bibliographical references. | ||
| 520 | |a This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations. With this book you will learn: The principles of linearization and efficiency improvement techniquesThe architectures allowing the optimum design of multimode Si RF and mmW power amplifiersHow to make designs more efficient by employing new design techniques such as linearization and efficiency improvementLayout considerationsExamples of schematic, layout, simulation and measurement results. | ||
| 505 | 0 | |a Front Cover; Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers; Copyright Page; Contents; List of Contributors; 1 Holistic Approaches for Power Generation, Linearization, and Radiation in CMOS; 1.1 Self-Healing Integrated Circuits; 1.1.1 Self-Healing mm-Wave Power Amplifier; 1.1.2 Sensing RF Power; 1.1.3 Sensing DC Current; 1.1.4 Actuating Quiescent Operating Point; 1.1.5 Data Conversion and Healing Algorithm; 1.1.6 Measurement Results; 1.2 Segmented Power Mixer for mm-Wave Transmitters; 1.2.1 Key Building Blocks; 1.2.2 Measurement Results | |
| 505 | 8 | |a 1.3 Distributed Active Radiation1.3.1 DAR Design Approach; 1.3.2 Architecture; 1.3.3 Measurement Results; References; 2 Cartesian Feedback with Digital Enhancement for CMOS RF Transmitter; 2.1 Introduction; 2.2 CFB Loop; 2.3 CFB Digital Part Implementation; 2.3.1 Phase Estimation; 2.3.1.1 "atan"-Based Architecture; 2.3.1.1.1 LUT-Based Architecture; 2.3.1.1.2 CORDIC-Based Architecture; 2.3.1.2 "Modulo" Function Implementation; 2.3.2 Vector Rotation; 2.3.2.1 LUT and Multipliers Solution; 2.3.2.2 CORDIC-Based Solution; 2.3.3 Subtraction; 2.3.4 Improvement of CFB CORDIC-Based Architecture | |
| 505 | 8 | |a 2.3.4.1 Modification of the CFB Algorithm2.3.4.2 New Architecture; 2.4 Analog Part Implementation; 2.5 Linearized Transmitter Results; 2.6 Power Consumption and Size Considerations; 2.7 Conclusion; References; 3 Transmitter Linearity and Energy Efficiency; 3.1 Introduction; 3.2 The PA Design Problem; 3.3 A Reverse Design Approach; 3.3.1 PA Operating Modes; 3.3.2 What Does "Gain" Mean When Nonlinear?; 3.3.3 Apparent Linearity: Output Signal Accuracy; 3.3.4 Stage Series Resistance; 3.4 Output Power Control; 3.5 OBO Elimination; 3.6 Stabilities: Circuit, Thermal, and Manufacturing | |
| 505 | 8 | |a 3.6.1 Stability of the Circuit3.6.2 Stability Over Temperature; 3.6.3 Stability Across Manufacturing; 3.7 Aging; 3.8 Categorizing C-mode Operation; 3.9 Conclusion; References; 4 mmW Doherty; 4.1 Introduction; 4.2 Doherty Amplifier; 4.2.1 Doherty Structure; 4.2.2 Nonidealities in Doherty Structure; 4.3 mmW Doherty Amplifiers; 4.3.1 Silicon Transistors in mmW Doherty Structure; 4.3.2 Passive Components in mmW Doherty Structure; 4.3.3 Other Techniques; References; 5 Reliable Power Amplifier; 5.1 Introduction; 5.2 Effect of CMOS Technology Scaling on Thermal Management | |
| 505 | 8 | |a 5.3 Metal Interconnects Electromigration5.4 Time-Dependent Dielectric Breakdown (TDDB); 5.5 Hot Carrier Injection; 5.5.1 DC Model; 5.5.2 RF Model; 5.6 Electrostatic Static Discharge; 5.6.1 Human Body Model; 5.6.2 Machine Model; 5.6.3 Charged Device Model; 5.6.4 ESD Protection; 5.7 Voltage Standing Wave Ratio; 5.8 Power Amplifier Design for Reliability; 5.8.1 Mission Profile Analysis; 5.9 Intrinsically Robust Design; 5.10 Self-Healing Design; 5.11 Conclusion; References; 6 Efficiency Enhancement for THz Power Amplifier; 6.1 Introduction | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Power amplifiers. | |
| 650 | 0 | |a Amplifiers, Radio frequency. | |
| 650 | 0 | |a Amplifiers (Electronics) | |
| 650 | 1 | 2 | |a Amplifiers, Electronic |
| 650 | 6 | |a Amplificateurs de puissance. | |
| 650 | 6 | |a Amplificateurs haute fréquence. | |
| 650 | 6 | |a Amplificateurs. | |
| 650 | 7 | |a amplifiers. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Amplifiers (Electronics) |2 fast | |
| 650 | 7 | |a Amplifiers, Radio frequency |2 fast | |
| 650 | 7 | |a Power amplifiers |2 fast | |
| 700 | 1 | |a Belot, Didier, |e author. | |
| 776 | 0 | 8 | |i Print version: |a Kerhervé, Eric. |t Linearization and efficiency enhancement techniques for silicon power amplifiers : from RF to mmW. |d Oxford, England : Academic Press, ©2015 |h viii, 154 pages |z 9780124186781 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1913803 |z Texto completo |
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