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Terrestrial Radiation Effects in ULSI Devices and Electronic Systems.
This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutron...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken :
Wiley,
2014.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Title Page; Copyright; Dedication; About the Author; Preface; Acknowledgements; Acronyms; Chapter 1: Introduction; 1.1 Basic Knowledge on Terrestrial Secondary Particles; 1.2 CMOS Semiconductor Devices and Systems; 1.3 Two Major Fault Modes: Charge Collection and Bipolar Action; 1.4 Four Hierarchies in Faulty Conditions in Electronic Systems: Fault
- Error
- Hazard
- Failure; 1.5 Historical Background of Soft-Error Research; 1.6 General Scope of This Book; References; Chapter 2: Terrestrial Radiation Fields; 2.1 General Sources of Radiation.
- 2.2 Backgrounds for Selection of Terrestrial High-Energy Particles2.3 Spectra at the Avionics Altitude; 2.4 Radioisotopes in the Field; 2.5 Summary of Chapter 2; References; Chapter 3: Fundamentals of Radiation Effects; 3.1 General Description of Radiation Effects; 3.2 Definition of Cross Section; 3.3 Radiation Effects by Photons (Gamma-ray and X-ray); 3.4 Radiation Effects by Electrons (Beta-ray); 3.5 Radiation Effects by Muons; 3.6 Radiation Effects by Protons; 3.7 Radiation Effects by Alpha-Particles; 3.8 Radiation Effects by Low-Energy Neutrons.
- 3.9 Radiation Effects by High-Energy Neutrons3.10 Radiation Effects by Heavy Ions; 3.11 Summary of Chapter 3; References; Chapter 4: Fundamentals of Electronic Devices and Systems; 4.1 Fundamentals of Electronic Components; 4.2 Fundamentals of Electronic Systems; 4.3 Summary of Chapter 4; References; Chapter 5: Irradiation Test Methods for Single Event Effects; 5.1 Field Test; 5.2 Alpha Ray SEE Test; 5.3 Heavy Ion Particle Irradiation Test; 5.4 Proton Beam Test; 5.5 Muon Test Method; 5.6 Thermal/Cold Neutron Test Methods; 5.7 High-Energy Neutron Test.
- 5.8 Testing Conditions and Matters That Require Attention5.9 Summary of Chapter 5; References; Chapter 6: Integrated Device Level Simulation Techniques; 6.1 Overall Multi-scale and Multi-physics Soft-Error Analysis System; 6.2 Relativistic Binary Collision and Nuclear Reaction Models; 6.3 Intra-nuclear Cascade (INC) Model for High-Energy Neutrons and Protons; 6.4 Evaporation Model for High-Energy Neutrons and Protons; 6.5 Generalised Evaporation Model (GEM) for Inverse Reaction Cross Sections; 6.6 Neutron Capture Reaction Model; 6.7 Automated Device Modelling.
- 6.8 Setting of Random Position of Spallation Reaction Point in a Component6.9 Algorithms for Ion Tracking; 6.10 Fault Mode Models; 6.11 Calculation of Cross Section; 6.12 Prediction for Scaling Effects of Soft Error Down to 22 nm Design Rule in SRAMs; 6.13 Evaluation of Effects of Heavy Elements in Semiconductor Devices by Nuclear Spallation Reaction; 6.14 Upper Bound Fault Simulation Model; 6.15 Upper Bound Fault Simulation Results; 6.16 Upper Bound Simulation Method for SOC (System On Chip); 6.17 Summary of Chapter 6; References.