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Terrestrial Radiation Effects in ULSI Devices and Electronic Systems.
This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutron...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken :
Wiley,
2014.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 049 | |a UAMI | ||
| 100 | 1 | |a Ibe, Eishi H. | |
| 245 | 1 | 0 | |a Terrestrial Radiation Effects in ULSI Devices and Electronic Systems. |
| 260 | |a Hoboken : |b Wiley, |c 2014. | ||
| 300 | |a 1 online resource (565 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Cover; Title Page; Copyright; Dedication; About the Author; Preface; Acknowledgements; Acronyms; Chapter 1: Introduction; 1.1 Basic Knowledge on Terrestrial Secondary Particles; 1.2 CMOS Semiconductor Devices and Systems; 1.3 Two Major Fault Modes: Charge Collection and Bipolar Action; 1.4 Four Hierarchies in Faulty Conditions in Electronic Systems: Fault -- Error -- Hazard -- Failure; 1.5 Historical Background of Soft-Error Research; 1.6 General Scope of This Book; References; Chapter 2: Terrestrial Radiation Fields; 2.1 General Sources of Radiation. | |
| 505 | 8 | |a 2.2 Backgrounds for Selection of Terrestrial High-Energy Particles2.3 Spectra at the Avionics Altitude; 2.4 Radioisotopes in the Field; 2.5 Summary of Chapter 2; References; Chapter 3: Fundamentals of Radiation Effects; 3.1 General Description of Radiation Effects; 3.2 Definition of Cross Section; 3.3 Radiation Effects by Photons (Gamma-ray and X-ray); 3.4 Radiation Effects by Electrons (Beta-ray); 3.5 Radiation Effects by Muons; 3.6 Radiation Effects by Protons; 3.7 Radiation Effects by Alpha-Particles; 3.8 Radiation Effects by Low-Energy Neutrons. | |
| 505 | 8 | |a 3.9 Radiation Effects by High-Energy Neutrons3.10 Radiation Effects by Heavy Ions; 3.11 Summary of Chapter 3; References; Chapter 4: Fundamentals of Electronic Devices and Systems; 4.1 Fundamentals of Electronic Components; 4.2 Fundamentals of Electronic Systems; 4.3 Summary of Chapter 4; References; Chapter 5: Irradiation Test Methods for Single Event Effects; 5.1 Field Test; 5.2 Alpha Ray SEE Test; 5.3 Heavy Ion Particle Irradiation Test; 5.4 Proton Beam Test; 5.5 Muon Test Method; 5.6 Thermal/Cold Neutron Test Methods; 5.7 High-Energy Neutron Test. | |
| 505 | 8 | |a 5.8 Testing Conditions and Matters That Require Attention5.9 Summary of Chapter 5; References; Chapter 6: Integrated Device Level Simulation Techniques; 6.1 Overall Multi-scale and Multi-physics Soft-Error Analysis System; 6.2 Relativistic Binary Collision and Nuclear Reaction Models; 6.3 Intra-nuclear Cascade (INC) Model for High-Energy Neutrons and Protons; 6.4 Evaporation Model for High-Energy Neutrons and Protons; 6.5 Generalised Evaporation Model (GEM) for Inverse Reaction Cross Sections; 6.6 Neutron Capture Reaction Model; 6.7 Automated Device Modelling. | |
| 505 | 8 | |a 6.8 Setting of Random Position of Spallation Reaction Point in a Component6.9 Algorithms for Ion Tracking; 6.10 Fault Mode Models; 6.11 Calculation of Cross Section; 6.12 Prediction for Scaling Effects of Soft Error Down to 22 nm Design Rule in SRAMs; 6.13 Evaluation of Effects of Heavy Elements in Semiconductor Devices by Nuclear Spallation Reaction; 6.14 Upper Bound Fault Simulation Model; 6.15 Upper Bound Fault Simulation Results; 6.16 Upper Bound Simulation Method for SOC (System On Chip); 6.17 Summary of Chapter 6; References. | |
| 500 | |a Chapter 7: Prediction, Detection and Classification Techniques of Faults, Errors and Failures. | ||
| 520 | |a This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Electronic circuits |x Effect of radiation on. | |
| 650 | 0 | |a Integrated circuits |x Ultra large scale integration |x Reliability. | |
| 650 | 0 | |a Integrated circuits |x Effect of radiation on. | |
| 650 | 6 | |a Circuits électroniques |x Effets du rayonnement sur. | |
| 650 | 6 | |a Circuits intégrés à ultra-grande échelle |x Fiabilité. | |
| 650 | 7 | |a Integrated circuits |x Effect of radiation on |2 fast | |
| 758 | |i has work: |a Terrestrial Radiation Effects in ULSI Devices and Electronic Systems [electronic resource] (Text) |1 https://id.oclc.org/worldcat/entity/E39PCYtMW3P4jTD9DVVR6pxtw3 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Ibe, Eishi H. |t Terrestrial Radiation Effects in ULSI Devices and Electronic Systems. |d Hoboken : Wiley, ©2014 |z 9781118479292 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1911831 |z Texto completo |
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