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Non-volatile memories /
Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a univer...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London : New York :
ISTE Ltd ; John Wiley and Sons, Inc.,
2014.
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| Colección: | Electronics engineering series (London, England)
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Lacaze, Pierre-Camille, |e author. | |
| 245 | 1 | 0 | |a Non-volatile memories / |c Pierre-Camille Lacaze, Jean-Christophe Lacroix. |
| 264 | 1 | |a London : |b ISTE Ltd ; |a New York : |b John Wiley and Sons, Inc., |c 2014. | |
| 300 | |a 1 online resource : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Electronics engineering series | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Online resource; title from PDF title page (EBSCO, viewed December 8, 2014). | |
| 505 | 0 | |a Cover; Title Page; Copyright; Contents; Acknowledgments; Preface; PART 1: Information Storage and the State of the Art of Electronic Memories; 1: General Issues Related to Data Storage and Analysis Classification of Memories and Related Perspectives; 1.1. Issues arising from the flow of digital information; 1.2. Current electronic memories and their classification; 1.3. Memories of the future; 2: State of the Art of DRAM, SRAM, Flash, HDD and MRAM Electronic Memories; 2.1. DRAM volatile memories; 2.1.1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor). | |
| 505 | 8 | |a 2.1.2. Operating characteristics of DRAM memories2.2. SRAM memories; 2.3. Non-volatile memories related to CMOS technology; 2.3.1. Operational characteristics of a floating gate MOSFET; 2.3.1.1. How to charge and discharge the floating gate?; 2.3.1.2. Physical problems related to the storage of electrical charges and their impact on the operation of a floating gate memory; 2.3.1.2.1. Charge retention; 2.3.1.2.2. Problems related to writing and electron injection; 2.3.1.3. Multilevel cells. | |
| 505 | 8 | |a 2.3.1.4. The quality of dielectrics: one of the reasons behind the limitation of floating gate memory performances2.3.1.5. The "Achille's heel" of floating gate memories; 2.3.2. Flash memories; 2.3.2.1. NOR and NAND Flash memories; 2.3.2.2. General organization of NAND Flash memories; 2.3.2.3. Perspectives for Flash memories; 2.4. Non-volatile magnetic memories (hard disk drives -- HDDs and MRAMs); 2.4.1. The discovery of giant magneto resistance at the origin of the spread of hard disk drives; 2.4.1.1. GMR characteristics; 2.4.2. Spin valves; 2.4.3. Magnetic tunnel junctions. | |
| 505 | 8 | |a 2.4.4. Operational characteristics of a hard disk drive (HDD)2.4.5. Characteristics of a magnetic random access memory (MRAM); 2.5. Conclusion; 3: Evolution of SSD Toward FeRAM, FeFET, CTM and STT-RAM Memories; 3.1. Evolution of DRAMs toward ferroelectric FeRAMs; 3.1.1. Characteristics of a ferroelectric material; 3.1.2. Principle of an FeRAM memory; 3.1.3. Characteristics of an FeFET memory; 3.1.3.1. Retention characteristics; 3.1.3.2. Ferroelectric materials other than oxides?; 3.2. The evolution of Flash memories towards charge trap memories (CTM). | |
| 505 | 8 | |a 3.3. The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM)3.3.1. Nanomagnetism and experimental implications; 3.3.2. Characteristics of spin torque transfer; 3.3.3. Recent evolution with use of perpendicular magneticanisotropic materials; 3.4. Conclusions; PART 2: The Emergence of New Concepts: The Inorganic NEMS, PCRAM, ReRAM and Organic Memories; 4: Volatile and Non-volatile Memories Based on NEMS; 4.1. Nanoelectromechanical switches with two electrodes; 4.1.1. NEMS with cantilevers; 4.1.1.1. Operation and memory effect of an NEMS with a cantilever. | |
| 520 | |a Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Magnetic memory (Computers) | |
| 650 | 0 | |a Computer storage devices. | |
| 650 | 0 | |a Integrated circuits. | |
| 650 | 2 | |a Computer Storage Devices | |
| 650 | 6 | |a Ordinateurs |x Mémoires magnétiques. | |
| 650 | 6 | |a Ordinateurs |x Mémoires. | |
| 650 | 6 | |a Circuits intégrés. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Computer storage devices |2 fast | |
| 650 | 7 | |a Integrated circuits |2 fast | |
| 650 | 7 | |a Magnetic memory (Computers) |2 fast | |
| 700 | 1 | |a Lacroix, Jean-Christophe, |e author. | |
| 758 | |i has work: |a Non-volatile memories (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGvQ7F3cVQQJrQd4yfrK3P |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Lacaze, Pierre-Camille. |t Non-volatile Memories. |d Hoboken : Wiley, ©2014 |z 9781848216235 |
| 830 | 0 | |a Electronics engineering series (London, England) | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1880170 |z Texto completo |
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