RF Power Amplifier.
This second edition of the highly acclaimed RF Power Amplifiers has been thoroughly revised and expanded to reflect the latest challenges associated with power transmitters used in communications systems. With more rigorous treatment of many concepts, the new edition includes a unique combination of...
Clasificación: | Libro Electrónico |
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Autor principal: | |
Formato: | Electrónico eBook |
Idioma: | Inglés |
Publicado: |
Hoboken :
Wiley,
2014.
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Edición: | 2nd ed. |
Temas: | |
Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Title Page; Copyright; Contents; Preface; About the Author; List of Symbols; List of Acronyms; Chapter 1 Introduction; 1.1 Radio Transmitters; 1.2 Batteries for Portable Electronics; 1.3 Block Diagram of RF Power Amplifiers; 1.4 Classes of Operation of RF Power Amplifiers; 1.5 Waveforms of RF Power Amplifiers; 1.6 Parameters of RF Power Amplifiers; 1.6.1 Drain Efficiency of RF Power Amplifiers; 1.6.2 Statistical Characterization of Transmitter Average Efficiency; 1.6.3 Gate-Drive Power; 1.6.4 Power-Added Efficiency; 1.6.5 Output-Power Capability; 1.7 Transmitter Noise.
- 1.8 Conditions for 100% Efficiency of Power Amplifiers1.9 Conditions for Nonzero Output Power at 100% Efficiency of Power Amplifiers; 1.10 Output Power of Class E ZVS Amplifiers; 1.11 Class E ZCS Amplifiers; 1.12 Antennas; 1.13 Propagation of Electromagnetic Waves; 1.14 Frequency Spectrum; 1.15 Duplexing; 1.16 Multiple-Access Techniques; 1.17 Nonlinear Distortion in Transmitters; 1.18 Harmonics of Carrier Frequency; 1.19 Intermodulation Distortion; 1.20 AM/AM Compression and AM/PM Conversion; 1.21 Dynamic Range of Power Amplifiers; 1.22 Analog Modulation; 1.22.1 Amplitude Modulation.
- 1.22.2 Phase Modulation1.22.3 Frequency Modulation; 1.23 Digital Modulation; 1.23.1 Amplitude-Shift Keying; 1.23.2 Phase-Shift Keying; 1.23.3 Frequency-Shift Keying; 1.24 Radars; 1.25 Radio-Frequency Identification; 1.26 Summary; 1.27 Review Questions; 1.28 Problems; References; Chapter 2 Class A RF Power Amplifier; 2.1 Introduction; 2.2 Power MOSFET Characteristics; 2.2.1 Square Law for MOSFET Drain Current; 2.2.2 Channel-Length Modulation; 2.2.3 Low- and Mid-Frequency Small-Signal Model of MOSFETs; 2.2.4 High-Frequency Small-Signal Model of the MOSFET; 2.2.5 Unity-Gain Frequency.
- 2.3 Short-Channel Effects2.3.1 Electric Field Effect on Charge Carriers Mobility; 2.3.2 Ohmic Region; 2.3.3 Pinch-Off Region; 2.3.4 Wide Band Gap Semiconductor Devices; 2.4 Circuit of Class A RF Power Amplifier; 2.5 Waveforms in Class A RF Amplifier; 2.5.1 Assumptions; 2.5.2 Current and Voltage Waveforms; 2.5.3 Output Power Waveforms; 2.5.4 Transistor Power Loss Waveforms; 2.6 Energy Parameters of Class A RF Power Amplifier; 2.6.1 Drain Efficiency of Class A RF Power Amplifier; 2.6.2 Statistical Characterization of Class A RF Power Amplifier.
- 2.6.3 Drain Efficiency at Nonzero Minimum Drain-to-Source Voltage2.6.4 Output-Power Capability of Class A RF Power Amplifier; 2.6.5 Gate Drive Power; 2.7 Parallel-Resonant Circuit; 2.7.1 Quality Factor of Parallel-Resonant Circuit; 2.7.2 Impedance of Parallel-Resonant Circuit; 2.7.3 Bandwidth of Parallel-Resonant Circuit; 2.8 Power Losses and Efficiency of Parallel-Resonant Circuit; 2.9 Class A RF Power Amplifier with Current Mirror; 2.10 Impedance Matching Circuits; 2.11 Class A RF Linear Amplifier; 2.11.1 Amplifier for Variable-Envelope Signals.