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Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium /
Collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications, Chapter 2: Cleaning for FEOL Appl...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Pfaffikon, Switzerland :
TTP,
2014.
|
| Colección: | Diffusion and defect data. Solid state phenomena ;
v. 219. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
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| 111 | 2 | |a International Symposium on Ultra Clean Processing of Semiconductor Surfaces |n (12th : |d 2014 : |c Brussels, Belgium) | |
| 245 | 1 | 0 | |a Ultra clean processing of semiconductor surfaces XII : |b selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / |c edited by Paul Mertens, Marc Meuris and Marc Heyns. |
| 264 | 1 | |a Pfaffikon, Switzerland : |b TTP, |c 2014. | |
| 264 | 2 | |a Enfield, New Hampshire : |b Trans Tech Publications Ltd, |c [date of distribution not identified] | |
| 264 | 4 | |c ©2014 | |
| 300 | |a 1 online resource (331 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Solid State Phenomena, |x 1662-7799 ; |v Volume 219 | |
| 504 | |a Includes bibliographical references at the end of each chapters and index. | ||
| 588 | 0 | |a Online resource; title from PDF title page (ebrary, viewed October 16, 2014). | |
| 520 | |a Collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications, Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area, Chapter 3: Wet Etching for FEOL Applications, Chapter 4: Wet Processing of High Aspect Ratio Structures, Chapter 5: Fluid Dynamics, Cleaning Mechanics, Chapter 6: Photo Resist Performance and Rework, Chapter 7: Cleaning for BEOL Interconnect Applications, Chapter 8: Cleaning for 3D Applications, Chapter 9: Contamination Control and AMC, Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells Keyword: Ultra-cleaning, precision cleaning, wet cleaning, Semiconductor Surfaces, contamination control, surface impurities, surface defects, Integrated circuits, Micro-electronic structures, photovoltaic processing, proceedings UCPSS. | ||
| 505 | 0 | |a Ultra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth | |
| 505 | 8 | |a Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet EtchingAluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid; Nanoscale Etching and Reoxidation of InAs | |
| 505 | 8 | |a Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled MonolayersCross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping | |
| 505 | 8 | |a Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet ProcessorSingle Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures | |
| 505 | 8 | |a Chapter 5: Fluid Dynamics, Cleaning MechanicsEffect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP | |
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Mertens, Paul, |e editor. | |
| 700 | 1 | |a Meuris, Marc, |e editor. | |
| 700 | 1 | |a Heyns, Marc, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a International Symposium on Ultra Clean Processing of Semiconductor Surfaces (12th : 2014 : Brussels, Belgium). |t Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium. |d Pfaffikon, Switzerland : TTP, ©2014 |h 333 pages |k Diffusion and defect data. Pt. B, Solid state phenomena ; Volume 219 |z 9783038352426 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. B, |p Solid state phenomena ; |v v. 219. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1910939 |z Texto completo |
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| 938 | |a EBSCOhost |b EBSC |n 862221 | ||
| 938 | |a Trans Tech Publications, Ltd |b TRAN |n 10.4028/www.scientific.net/SSP.219 | ||
| 938 | |a YBP Library Services |b YANK |n 12107163 | ||
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