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Fundamentals of Silicon Carbide Technology : Growth, Characterization, Devices and Applications.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs)...
| Clasificación: | Libro Electrónico |
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| Autor principal: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken :
Wiley,
2014.
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| Temas: | |
| Acceso en línea: | Texto completo |
| Sumario: | A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, hig. |
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| Notas: | 5.3.1 Major Deep Levels in SiC. |
| Descripción Física: | 1 online resource (555 pages) |
| Bibliografía: | Includes bibliographical references at the end of each chapters and index. |
| ISBN: | 9781118313541 1118313542 9781118313534 1118313534 1118313526 9781118313527 |