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Wide band gap semiconductor nanowires. 2, Heterostructures and optoelectronic devices /

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV d...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Consonni, Vincent (Editor ), Feuillet, Guy (Editor )
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London, UK : ISTE, 2014.
Colección:Electronics engineering series (London, England)
Temas:
Acceso en línea:Texto completo
Descripción
Sumario:This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and.
Descripción Física:1 online resource : illustrations (black and white)
Bibliografía:Includes bibliographical references.
ISBN:9781118984277
1118984277
9781118984291
1118984293
1848216874
9781848216877
9781118984284
1118984285