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Introduction to crystal growth and characterization /

This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Benz, Klaus-Werner
Otros Autores: Neumann, Wolfgang
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Hoboken : Wiley, Ã2014.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Introduction to Crystal Growth and Characterization
  • Contents
  • Preface
  • Acknowledgments
  • Chapter 1 Fundamentals of Crystalline Materials
  • 1.1 Crystalline State
  • 1.2 Fundamentals of Geometrical Crystallography
  • 1.2.1 Crystal Lattices
  • 1.2.2 Crystal Axes Systems, Crystal Systems, and Crystal Families
  • 1.2.3 Crystal Faces and Zones
  • 1.2.4 Indexing in the Hexagonal Crystal Family
  • 1.3 Morphological Symmetry of Crystals
  • 1.3.1 Crystallographic Point Groups
  • 1.3.2 Some Basic Facts of Group Theory
  • 1.4 Structural Symmetry
  • 1.4.1 Crystal Lattices, Motifs, and Crystal Structures
  • 1.4.1.1 Bravais Lattices
  • 1.4.1.2 The Reciprocal Lattice
  • 1.4.1.3 Lattice Transformations
  • 1.4.2 Crystallographic Space Groups
  • 1.4.2.1 General Remarks
  • 1.4.2.2 The International Tables for Crystallography
  • The Reference Book for the Representation of Space Group Symmetries
  • 1.4.2.3 Mathematical Description of the Space Group Symmetry
  • 1.4.3 Generalized Crystallographic Symmetry
  • 1.5 Crystal Structures
  • 1.5.1 Sphere Packings
  • 1.5.2 Selected Examples of Inorganic Structure Types
  • 1.5.2.1 Polymorphism and Polytypism
  • 1.5.3 Selected Examples of Molecular Crystals
  • 1.5.4 Symmetry Relations between Crystal Structures
  • 1.6 Crystallographic Databases and Crystallographic Computer Programs
  • Appendix: Supplementary Material S1 Special Crystal Forms of Cubic Crystal Classes
  • References
  • Chapter 2 Basics of Growth Mechanism and Solidification
  • 2.1 Nucleation Processes
  • 2.1.1 Homogeneous Nucleation
  • 2.1.2 Heterogeneous Nucleation
  • 2.1.3 Metastable Zone Regime
  • 2.1.4 Equilibrium Shape of Crystals
  • 2.2 Kinetic Processes and Growth Mechanism
  • 2.2.1 Molecular Kinetic Theory of Crystal Growth
  • 2.2.2 Interfaces and Roughening of Surfaces.
  • 2.2.3 Vapor-Liquid-Solid (VLS) Mechanism
  • 2.2.4 Crystal Growth from Ambient Phases on Rough Surfaces: Vapor Phase, Solution, and Melt Media
  • 2.2.5 Crystal Growth on Flat Surfaces
  • 2.3 Phase Diagrams and Principles of Segregation
  • 2.3.1 Phase Diagrams with a Continuous Miscibility in the Solid and Liquid Phases
  • 2.3.2 Segregation and Segregation Coefficients
  • 2.3.3 Constitutional Supercooling and Morphological Stability
  • 2.4 Principles of Flow Regimes in Growth Melts
  • 2.4.1 Buoyancy Convection
  • 2.4.2 Marangoni Convection
  • References
  • Chapter 3 Growth Techniques in Correlation with Related Growth Mechanism
  • 3.1 Overview on Main Growth Techniques
  • 3.2 Principles of Melt Growth Techniques
  • 3.2.1 The Czochralski Crystal Growth Process
  • 3.2.2 Growth Method after Bridgman
  • 3.2.3 The Float Zone Crystal Growth Process
  • 3.2.4 Bulk Crystal Growth from Metallic Solutions
  • 3.2.4.1 Traveling Solvent Method (TSM)
  • 3.2.4.2 Traveling Heater Method (THM)
  • 3.2.4.3 The Solute, Synthesis, Diffusion Method (SSD)
  • 3.3 Bulk Crystal Growth of II-VI Compounds from the Vapor
  • 3.3.1 Crystal Growth of CdTe by a Sublimation Traveling Heater Method, STHM, in Closed Ampoules
  • 3.3.2 Crystal Growth of CdTe by the Markov Method in Semiclosed Ampoules
  • 3.4 Epitaxial Growth Techniques
  • 3.4.1 Liquid Phase Epitaxy (LPE)
  • 3.4.2 Vapor Phase Epitaxy (VPE)
  • 3.5 Supplementary Material: Principles of Verneuil Technique, Growth from High and Low Temperature, Nonmetallic Solutions
  • 3.5.1 Verneuil Technique
  • 3.5.2 Growth from High Temperature Solutions (Flux Growth)
  • 3.5.3 Growth from Low Temperature Solutions (Aqueous Solutions)
  • References
  • Chapter 4 Characterization of Crystals
  • 4.1 Crystal Defects
  • 4.1.1 Zero-Dimensional Defects
  • 4.1.2 One-Dimensional Defects.
  • 4.1.3 Two-Dimensional Defects (Planar Defects)
  • 4.1.3.1 Grain Boundaries
  • 4.1.3.2 Stacking Faults
  • 4.1.3.3 Antiphase Boundaries
  • 4.1.3.4 Twins
  • 4.1.3.5 Domain Boundaries
  • 4.1.3.6 Crystal Surfaces
  • 4.1.4 Three-Dimensional defects
  • 4.1.4.1 Inclusions
  • 4.1.4.2 Precipitates
  • 4.1.4.3 Voids
  • 4.2 Crystal Quality
  • 4.2.1 Criteria of Crystal Quality
  • 4.2.2 Crystal Quality and Application
  • 4.3 Selected Methods of Crystal Characterization
  • 4.3.1 Etching of Crystals
  • 4.3.2 X-Ray Topography
  • 4.3.3 Electron Microscopy
  • 4.3.3.1 Scanning Electron Microscopy
  • 4.3.3.2 Transmission Electron Microscopy
  • 4.4 Materials Engineering by Correlation of Crystal Growth and Characterization
  • 4.4.1 Epitaxial Growth of GaN on LiAlO2 Substrates
  • References
  • Index
  • EULA.