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Beyond-CMOS nanodevices 2 /
This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowir...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London : Hoboken, NJ :
ISTE ; Wiley,
2014.
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| Colección: | ISTE.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a Beyond-CMOS nanodevices 2 / |c edited by Francis Balestra. |
| 264 | 1 | |a London : |b ISTE ; |a Hoboken, NJ : |b Wiley, |c 2014. | |
| 300 | |a 1 online resource (xvi, 136 pages) | ||
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| 505 | 0 | |a Cover; Title Page; Copyright; Contents; Acknowledgments; General Introduction; Introduction To Volume 2: Silicon Nanowire Bio-Chemical Sensors; Chapter 1. Small Slope Switches; 1.1. Introduction; 1.2. Tunnel FETs; 1.3. Ferroelectric gate FET; 1.4. Bibliography; Chapter 2. Nanowire Devices; 2.1. Introduction; 2.2. NW for logic CMOS devices; 2.2.1. NW fabrication and technology; 2.2.2. Quantum simulation of NWs; 2.2.3. Electrical characterization of NWs; 2.3. Nano-CMOS ultimate memories; 2.3.1. Overview of memory; 2.3.2. NW application in the evolutive solution path. | |
| 505 | 8 | |a 2.3.3. NW technology along the disruptive solution path2.4. Conclusions; 2.5. Acknowledgments; 2.6. Bibliography; Chapter 3. Graphene And 2D Layer Devices For More Moore And More-Than-Moore Applications; 3.1. Introduction; 3.2. Graphene; 3.2.1. Graphene fabrication; 3.2.2. Macroscopic graphene field effect transistors; 3.2.3. Graphene nanoribbon transistors; 3.2.4. Bilayer graphene and substrate effects; 3.2.5. RF transistors; 3.2.6. Alternative graphene switches; 3.3. 2D materials beyond graphene; 3.4. Conclusions; 3.5. Acknowledgments; 3.6. Bibliography. | |
| 505 | 8 | |a Chapter 4. Nanoelectromechanical Switches4.1. Context; 4.2. Nanorelay principles; 4.2.1. The electrostatic actuation; 4.2.2. The piezoelectrical actuation; 4.2.3. The magnetic actuation; 4.2.4. The thermal actuation; 4.3. Electrostatic nanorelay modeling and optimization; 4.3.1. Dynamic modeling; 4.3.2. Quasi-static modeling; 4.4. Technological challenges for NEMS computing; 4.4.1. Low voltage operation; 4.4.2. Reliability of contact technology; 4.5. NEMS-based architectures; 4.5.1. Conventional architectures; 4.5.2. Adiabatic architectures; 4.6. Conclusions; 4.7. Bibliography. | |
| 520 | |a This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 0 | |a Nanostructures. | |
| 650 | 0 | |a Metal oxide semiconductors, Complementary. | |
| 650 | 6 | |a Nanoélectronique. | |
| 650 | 6 | |a Nanostructures. | |
| 650 | 6 | |a MOS complémentaires. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Metal oxide semiconductors, Complementary |2 fast | |
| 650 | 7 | |a Nanoelectronics |2 fast | |
| 650 | 7 | |a Nanostructures |2 fast | |
| 700 | 1 | |a Balestra, Francis, |e editor. | |
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| 776 | 0 | 8 | |i Print version: |t Beyond CMOS nanodevices 2 |z 9781848216556 |w (DLC) 2014935738 |w (OCoLC)880400908 |
| 830 | 0 | |a ISTE. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1707096 |z Texto completo |
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