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Frontiers in electronics : advanced modeling in nanoscale electron devices /
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Singapore :
World Scientific,
[2014]
|
| Colección: | Selected topics in electronics and systems ;
volume 54. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | EBOOKCENTRAL_ocn878138012 | ||
| 003 | OCoLC | ||
| 005 | 20240329122006.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 140320t20142014si ob 001 0 eng d | ||
| 040 | |a E7B |b eng |e rda |e pn |c E7B |d OCLCQ |d OCLCO |d COO |d OCLCF |d MYG |d EBLCP |d N$T |d YDXCP |d ZCU |d OTZ |d GGVRL |d OCLCQ |d DEBSZ |d OCLCQ |d AGLDB |d MOR |d PIFAG |d MERUC |d OCLCQ |d U3W |d STF |d VTS |d NRAMU |d CRU |d ICG |d OCLCQ |d INT |d OCLCQ |d TKN |d OCLCQ |d DKC |d OCLCQ |d M8D |d OCLCQ |d AJS |d OCLCO |d OCLCQ |d QGK |d OCLCO |d OCLCL | ||
| 019 | |a 873140228 |a 890604274 |a 961594244 |a 962634491 |a 1259107280 | ||
| 020 | |a 9789814583190 |q (e-book) | ||
| 020 | |a 9814583197 |q (e-book) | ||
| 020 | |z 9789814583183 | ||
| 029 | 1 | |a AU@ |b 000052839826 | |
| 029 | 1 | |a AU@ |b 000058200499 | |
| 029 | 1 | |a DEBBG |b BV043027723 | |
| 029 | 1 | |a DEBBG |b BV043780888 | |
| 029 | 1 | |a DEBBG |b BV044067178 | |
| 029 | 1 | |a DEBSZ |b 446436674 | |
| 029 | 1 | |a DEBSZ |b 45655758X | |
| 035 | |a (OCoLC)878138012 |z (OCoLC)873140228 |z (OCoLC)890604274 |z (OCoLC)961594244 |z (OCoLC)962634491 |z (OCoLC)1259107280 | ||
| 050 | 4 | |a TK7874.84 |b .F76 2014eb | |
| 072 | 7 | |a TEC |x 009000 |2 bisacsh | |
| 072 | 7 | |a TEC |x 035000 |2 bisacsh | |
| 082 | 0 | 4 | |a 620.5 |
| 049 | |a UAMI | ||
| 245 | 0 | 0 | |a Frontiers in electronics : |b advanced modeling in nanoscale electron devices / |c editors, Benjamin Iñiguez, Universitat Rovira, Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway. |
| 264 | 1 | |a Singapore : |b World Scientific, |c [2014] | |
| 264 | 4 | |c ©2014 | |
| 300 | |a 1 online resource (204 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v volume 54 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Online resource; title from PDF title page (ebrary, viewed March 20, 2014). | |
| 505 | 0 | |a PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX). | |
| 505 | 8 | |a 4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori -- Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model. | |
| 505 | 8 | |a 3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques. | |
| 505 | 8 | |a 2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs. | |
| 505 | 8 | |a 3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs. | |
| 520 | |a This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp. | ||
| 546 | |a English. | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 6 | |a Nanoélectronique. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
| 650 | 7 | |a Nanoelectronics |2 fast | |
| 700 | 1 | |a Iñiguez, Benjamin, |e editor. | |
| 700 | 1 | |a Fjeldly, Tor A., |e editor. | |
| 758 | |i has work: |a Frontiers in electronics (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGgykQf4MwyFvxxR9qF8yd |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Iniguez, Benjamin. |t Frontiers in Electronics : Advanced Modeling of Nanoscale Electron Devices. |d Singapore : World Scientific Publishing Company, ©2014 |z 9789814583183 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v volume 54. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1647261 |z Texto completo |
| 936 | |a BATCHLOAD | ||
| 938 | |a EBL - Ebook Library |b EBLB |n EBL1647261 | ||
| 938 | |a ebrary |b EBRY |n ebr10845309 | ||
| 938 | |a EBSCOhost |b EBSC |n 704075 | ||
| 938 | |a Cengage Learning |b GVRL |n GVRL8QYQ | ||
| 938 | |a YBP Library Services |b YANK |n 11608589 | ||
| 994 | |a 92 |b IZTAP | ||