Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /

Mostrar otras versiones (1)

This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Workshop on Semiconductor-on-Insulator Materials and Devices Kiev, Ukraine
Otros Autores: Nazarov, A. N. (Alexei N.), Raskin, J.-P. (Jean-Pierre), 1971-
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Durnten-Zurich, Switzerland : Trans Tech Publications, [2011]
Colección:Advanced materials research ; 276.
Temas:
Semiconductors > Congresses.
Silicon-on-insulator technology > Congresses.
Nanoelectromechanical systems > Congresses.
Nanotechnology > Congresses.
Semi-conducteurs > Congrès.
Silicium sur isolant > Congrès.
Nanosystèmes électromécaniques > Congrès.
Nanotechnologie > Congrès.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Nanoelectromechanical systems
Nanotechnology
Semiconductors
Silicon-on-insulator technology
Nanoscaled
Semiconductor-on-insulator
Sensors
Insulator
Conference papers and proceedings
Acceso en línea:Texto completo
Descripción
Sumario:This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Descripción Física:1 online resource (199 pages) : illustrations
Bibliografía:Includes bibliographical references and indexes.
ISBN:9783038136156
3038136158
ISSN:1022-6680 ;
1022-6680

Ejemplares similares