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Silicon carbide and related materials 2013 /
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invi...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Switzerland :
Trans Tech Publications,
2014.
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| Colección: | Materials science forum ;
v. 778-780. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth.
- Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method.
- Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity.
- Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle.
- Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate.