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HgCDTe system : reference guide /
This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero val...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Stafa-Zuerich, Switzerland :
TTP, Trans Tech Publications,
[2007]
|
| Colección: | Diffusion and defect data. Defect and diffusion forum ;
v. 267. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 245 | 0 | 0 | |a HgCDTe system : |b reference guide / |c D.J. Fisher, editor. |
| 264 | 1 | |a Stafa-Zuerich, Switzerland : |b TTP, Trans Tech Publications, |c [2007] | |
| 264 | 4 | |c ©2007 | |
| 300 | |a 1 online resource (192 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Defects and diffusion forum, |x 1012-0386 ; |v v. 267 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys. As an aid to those working on this system, this volume summarizes known diffusion and defect properties of the end-members and of the intermediate alloys, gathered over the past few decades. The contents include data on the diffusion of Ag, Al, As, Au, Bi, Br, C, Ca, Cd, Cl, Co, Cr, Cu, Fe, Ga, H, Hg, I, In, K, Li, Mn, Na, Ni, O, P, S, Sb, Se, Sn, Te and Zn in various compositions, as well as the details of defect phenomena involving antiphase boundaries, dislocations, grain boundaries, point defects, surface defects, and twins. | ||
| 505 | 0 | |a HgCdTe System -- Reference Guide; Table of Contents; Abstracts | |
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 590 | |a eBooks on EBSCOhost |b EBSCO eBook Subscription Academic Collection - Worldwide | ||
| 650 | 0 | |a Physical metallurgy. | |
| 650 | 0 | |a Diffusion. | |
| 650 | 0 | |a Solids |x Defects. | |
| 650 | 6 | |a Métallurgie physique. | |
| 650 | 6 | |a Diffusion (Physique) | |
| 650 | 6 | |a Solides |x Défauts. | |
| 650 | 7 | |a diffusion. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Metallurgy. |2 bisacsh | |
| 650 | 7 | |a Diffusion |2 fast | |
| 650 | 7 | |a Physical metallurgy |2 fast | |
| 650 | 7 | |a Solids |x Defects |2 fast | |
| 700 | 1 | |a Fisher, D. J. | |
| 758 | |i has work: |a HgCDTe system (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGvjJ6p8Rgx6Wm7jJfW8VK |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |t HgCDTe system : reference guide. |d Stafa-Zuerich, Switzerland : TTP, Trans Tech Publications, 2007 |h 188 pages : illustrations ; 25 cm. |k Defect and diffusion forum ; v. 267 |z 9783908451440 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. A, |p Defect and diffusion forum ; |v v. 267. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1869136 |z Texto completo |
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