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Gettering and defect engineering in semiconductor technology XV /
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells;...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
[Durnten-Zurich] :
Trans Tech Publications,
[2014]
|
| Colección: | Diffusion and defect data. Solid state phenomena ;
v. 205-206. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 001 | EBOOKCENTRAL_ocn868672758 | ||
| 003 | OCoLC | ||
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| 008 | 140121t20142014sz a ob 101 0 eng d | ||
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| 035 | |a (OCoLC)868672758 | ||
| 050 | 4 | |a QD543.G48 2014eb | |
| 082 | 0 | 4 | |a 620.112972 |
| 049 | |a UAMI | ||
| 111 | 2 | |a International Conference on Gettering and Defect Engineering in Semiconductor Technology |n (15th : |d 2013 : |c Oxford, Great Britain) | |
| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology XV / |c [edited by J.D. Murphy]. |
| 264 | 1 | |a [Durnten-Zurich] : |b Trans Tech Publications, |c [2014] | |
| 264 | 4 | |c ©2014 | |
| 300 | |a 1 online resource (xiv, 516 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a computer |2 rdacarrier | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Diffusion and defect data. Pt. B, Solid state phenomena, |x 1012-0394 ; |v vols. 205-206 | |
| 500 | |a Selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Online resource; title from HTML table of contents page (Scientific.Net, viewed January 16, 2014). | |
| 505 | 0 | |a Gettering and Defect Engineering in Semiconductor Technology XV; Preface, Committees, Invited Speakers and Sponsor; Table of Contents; I. Defect Engineering in Silicon Solar Cells; Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination; Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions; External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells; Precipitation of Interstitial Iron in Multicrystalline Silicon | |
| 505 | 8 | |a Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness; II. Structural and Production Issues in Cast Silicon Materials for Solar Cells; Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells; Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers | |
| 505 | 8 | |a The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si; Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon; 10 cm Diameter Mono Cast Si Growth and its Characterization; Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method; III. Characterisation of Silicon for Solar Cells; Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon | |
| 505 | 8 | |a Efficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon Bricks; Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces; Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB; A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization; IV. Intrinsic Point Defects in Silicon; Properties of Point Defects in Silicon: New Results after a Long-Time Debate; Fast and Slow Vacancies in Silicon | |
| 505 | 8 | |a Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsV. Light Impurities in Silicon-Based Materials; First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals; The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon; Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors; Light-Element Impurities and their Reactions in Multicrystalline Si; Isotope-Dependent Phonon Trapping at Defects in Semiconductors | |
| 520 | |a The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processin. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Getters |v Congresses. | |
| 650 | 0 | |a Silicon |v Congresses. | |
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 6 | |a Getters |v Congrès. | |
| 650 | 6 | |a Silicium |v Congrès. | |
| 650 | 6 | |a Semi-conducteurs |v Congrès. | |
| 650 | 7 | |a Getters |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Murphy, J. D., |e editor. | |
| 758 | |i has work: |a Gettering and Defect Engineering in Semiconductor Technology XV (Text) |1 https://id.oclc.org/worldcat/entity/E39PCYPPdq4KgGKvhktK3bwCjP |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |t Gettering and defect engineering in semiconductor technology XV. |d Durnten-Zurich : Trans Tech publications Ltd, [2014] |z 9783037858240 |w (OCoLC)868071336 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. B, |p Solid state phenomena ; |v v. 205-206. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=3038145 |z Texto completo |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL3038145 | ||
| 994 | |a 92 |b IZTAP | ||