Cargando…

Ion Implantation and Activation - Volume 2.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Suzuki, Kunihiro
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Sharjah : Bentham Science Publishers, 2013.
Colección:Ion Implantation and Activation.
Temas:
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000 4500
001 EBOOKCENTRAL_ocn865331834
003 OCoLC
005 20240329122006.0
006 m o d
007 cr |n|||||||||
008 131214s2013 xx ob 001 0 eng d
040 |a EBLCP  |b eng  |e pn  |c EBLCP  |d E7B  |d OCLCQ  |d BENTH  |d OCLCQ  |d CCO  |d OCLCO  |d OCLCF  |d YDXCP  |d DEBSZ  |d OCLCQ  |d AZK  |d ZCU  |d MERUC  |d OCLCQ  |d ICG  |d OCLCQ  |d WYU  |d DKC  |d AU@  |d OCLCQ  |d TUHNV  |d OCLCO  |d OCLCQ  |d OCLCO 
019 |a 961551256  |a 962578001 
020 |a 9781608057900 
020 |a 1608057909 
020 |z 9781608057917 
029 1 |a AU@  |b 000066756579 
029 1 |a DEBBG  |b BV044065177 
029 1 |a DEBSZ  |b 431573255 
029 1 |a NZ1  |b 15912643 
035 |a (OCoLC)865331834  |z (OCoLC)961551256  |z (OCoLC)962578001 
050 4 |a QC702.7.I55  |b S89 2013eb 
082 0 4 |a 530.4 
049 |a UAMI 
100 1 |a Suzuki, Kunihiro. 
245 1 0 |a Ion Implantation and Activation - Volume 2. 
260 |a Sharjah :  |b Bentham Science Publishers,  |c 2013. 
300 |a 1 online resource (171 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Ion Implantation and Activation 
505 0 |a Cover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; Chapter 08; Chapter 09; Index. 
520 |a Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. 
588 0 |a Print version record. 
504 |a Includes bibliographical references and index. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Ion implantation. 
650 0 |a Ion accelerators. 
650 6 |a Ions  |x Implantation. 
650 6 |a Accélérateurs d'ions. 
650 7 |a Ion accelerators  |2 fast 
650 7 |a Ion implantation  |2 fast 
776 0 8 |i Print version:  |a Suzuki, Kunihiro.  |t Ion Implantation and Activation - Volume 2.  |d Sharjah : Bentham Science Publishers, ©2013  |z 9781608057917 
830 0 |a Ion Implantation and Activation. 
856 4 0 |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1572232  |z Texto completo 
936 |a BATCHLOAD 
938 |a Bentham Science Publisher  |b BENT  |n 9781608057900 
938 |a ProQuest Ebook Central  |b EBLB  |n EBL1572232 
938 |a ebrary  |b EBRY  |n ebr10817741 
938 |a YBP Library Services  |b YANK  |n 11419105 
994 |a 92  |b IZTAP