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Ion Implantation and Activation - Volume 3.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Suzuki, Kunihiro
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Sharjah : Bentham Science Publishers, 2013.
Colección:Ion Implantation and Activation.
Temas:
Acceso en línea:Texto completo

MARC

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245 1 0 |a Ion Implantation and Activation - Volume 3. 
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505 0 |a Cover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; Index. 
520 |a Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. 
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504 |a Includes bibliographical references and index. 
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650 0 |a Ion accelerators. 
650 6 |a Ions  |x Implantation. 
650 6 |a Accélérateurs d'ions. 
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650 7 |a Ion implantation  |2 fast 
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