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SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /

Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The boo...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Omura, Y. (Yasuhisa)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore : John Wiley & Sons Inc., [2013]
Temas:
Acceso en línea:Texto completo

MARC

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100 1 |a Omura, Y.  |q (Yasuhisa)  |1 https://id.oclc.org/worldcat/entity/E39PCjBqb6jKyphttFJKJJFTxP 
245 1 0 |a SOI lubistors :  |b lateral, unidirectional, bipolar-type insulated-gate transistors /  |c Yasuhisa Omura. 
246 3 0 |a Lubistors 
246 3 |a Silicon-on-insulator lubistors 
264 1 |a Singapore :  |b John Wiley & Sons Inc.,  |c [2013] 
264 4 |c ©2013 
300 |a 1 online resource (319 pages) :  |b illustrations 
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504 |a Includes bibliographical references and index. 
505 0 |a Part one. Brief review and modern applications of pn-junction devices -- part two. Physics and modeling of SOI lubistors : thick-film devices -- part three. Physics and modeling of SOI lubistors : thin-film devices -- part four. Circuit applications -- part five. Optical device applications of SOI lubistors -- part six. SOI lubistor as a testing tool -- part seven. Future prospects -- part eight. Summary of physics for semiconductor devices and mathematics for device analyses. 
588 0 |a Print version record. 
520 |a Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Insulated gate bipolar transistors. 
650 0 |a Silicon-on-insulator technology. 
650 6 |a Transistors bipolaires à grille isolée. 
650 6 |a Silicium sur isolant. 
650 7 |a Insulated gate bipolar transistors  |2 fast 
650 7 |a Silicon-on-insulator technology  |2 fast 
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776 0 8 |i Print version:  |a Omura, Y.  |t SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors.  |d Singapore : John Wiley & Sons Inc., [2013]  |h xviii, 299 pages  |z 9781118487907  |w (DLC) 2013023085 
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