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Semiconductors : Group IV Elements and III-V Compounds /
The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for h...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
1991.
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| Colección: | Data in science and technology,
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Part A: Introduction: General remarks
- Physical quantities tabulated in this volume
- Part B: Physical data: Elements of the IVth group and the IV-IV compounds: Diamond (C)
- Silicon (Si)
- Germanium (Ge)
- Grey tin (Sn)
- Silicon carbide (SiC)
- Silicon germanium alloys (SixGe1-x)
- III-V compounds: Boron nitride (BN)
- Boron phosphide (BP)
- Boron arsenide (BAs)
- Aluminium nitride (AlN)
- Aluminium phosphide (AlP)
- Aluminium arsenide (AlAs)
- Aluminium antimonide (AlSb)
- Gallium nitride (GaN)
- Gallium phosphide (GaP)
- Gallium arsenide (GaAs)
- Gallium antimonide (GaSb)
- Indium nitride (InN)
- Indium phosphide (InP)
- Indium arsenide (InAs)
- Indium antimonide (InSb)
- Ternary and quaterny alloys between III-V compounds
- Appendix: Contents of the volumes of the New Series of Landolt-Brnstein dealing with group IV and group III-V semiconductors.