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Metal impurities in silicon-device fabrication /
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of mai...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
1995.
|
| Colección: | Springer series in materials science ;
24. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- 1. Introduction
- 2. Common Properties of Transition Metals
- 2.1 General Behavior
- 2.2 Contamination of Silicon Wafers
- 2.3 Impact on Device Performance
- 3. Properties of Transition Metals in Silicon
- 3.1 Solubilities
- 3.2 Diffusivities
- 3.3 Dissolved Impurities
- 3.4 Precipitated Metals
- 4. Properties of the Main Impurities
- 4.1 Iron
- 4.2 Nickel
- 4.3 Copper
- 4.4 Molybdenum
- 4.5 Palladium
- 4.6 Platinum
- 4.7 Gold
- 5. Properties of Rare Impurities
- 5.1 Scandium
- 5.2 Titanium
- 5.3 Vanadium
- 5.4 Chromium
- 5.5 Manganese
- 5.6 Cobalt
- 5.7 Zinc
- 5.8 Rhodium
- 5.9 Silver
- 5.10 Tantalum
- 5.11 Tungsten
- 5.12 Mercury
- 6. Detection Methods
- 6.1 Detection of Total Impurity Content
- 6.2 Detection of Dissolved Impurities
- 6.3 Detection of Precipitates
- 7. Requirements of Modern Technology
- 7.1 Reduction of Contamination
- 8. Gettering of Impurities
- 8.1 Gettering Mechanisms
- 8.2 Control of Gettering Efficiency
- 9. Conclusion and Future Trends
- References.