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Metal impurities in silicon-device fabrication /
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of mai...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
1995.
|
| Colección: | Springer series in materials science ;
24. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Graff, Klaus, |d 1931- |e author. | |
| 245 | 1 | 0 | |a Metal impurities in silicon-device fabrication / |c by Klaus Graff. |
| 264 | 1 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg, |c 1995. | |
| 300 | |a 1 online resource (ix, 216 pages) : |b 47 illustrations. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |b PDF |2 rda | ||
| 490 | 1 | |a Springer Series in Materials Science, |x 0933-033X ; |v 24 | |
| 504 | |a Includes bibliographical references (pages 201-214) and index. | ||
| 520 | |a Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon. | ||
| 505 | 0 | |a 1. Introduction -- 2. Common Properties of Transition Metals -- 2.1 General Behavior -- 2.2 Contamination of Silicon Wafers -- 2.3 Impact on Device Performance -- 3. Properties of Transition Metals in Silicon -- 3.1 Solubilities -- 3.2 Diffusivities -- 3.3 Dissolved Impurities -- 3.4 Precipitated Metals -- 4. Properties of the Main Impurities -- 4.1 Iron -- 4.2 Nickel -- 4.3 Copper -- 4.4 Molybdenum -- 4.5 Palladium -- 4.6 Platinum -- 4.7 Gold -- 5. Properties of Rare Impurities -- 5.1 Scandium -- 5.2 Titanium -- 5.3 Vanadium -- 5.4 Chromium -- 5.5 Manganese -- 5.6 Cobalt -- 5.7 Zinc -- 5.8 Rhodium -- 5.9 Silver -- 5.10 Tantalum -- 5.11 Tungsten -- 5.12 Mercury -- 6. Detection Methods -- 6.1 Detection of Total Impurity Content -- 6.2 Detection of Dissolved Impurities -- 6.3 Detection of Precipitates -- 7. Requirements of Modern Technology -- 7.1 Reduction of Contamination -- 8. Gettering of Impurities -- 8.1 Gettering Mechanisms -- 8.2 Control of Gettering Efficiency -- 9. Conclusion and Future Trends -- References. | |
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Chemistry, Inorganic. | |
| 650 | 0 | |a Electronics. | |
| 650 | 0 | |a Surfaces (Physics) | |
| 650 | 2 | |a Chemistry, Inorganic | |
| 650 | 2 | |a Electronics | |
| 650 | 6 | |a Chimie inorganique. | |
| 650 | 6 | |a Électronique. | |
| 650 | 6 | |a Surfaces (Physique) | |
| 650 | 7 | |a inorganic chemistry. |2 aat | |
| 650 | 7 | |a Chemistry, Inorganic |2 fast | |
| 650 | 7 | |a Electronics |2 fast | |
| 650 | 7 | |a Surfaces (Physics) |2 fast | |
| 758 | |i has work: |a Metal impurities in silicon-device fabrication (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFVcbhvdXjMkD4RqVd87QC |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Graff, Klaus, 1931- |t Metal impurities in silicon-device fabrication. |d Berlin ; New York : Springer-Verlag, ©1995 |z 3540583173 |w (DLC) 94024599 |w (OCoLC)31166396 |
| 830 | 0 | |a Springer series in materials science ; |v 24. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=3098640 |z Texto completo |
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