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Metal impurities in silicon-device fabrication /

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of mai...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Graff, Klaus, 1931- (Autor)
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Berlin, Heidelberg : Springer Berlin Heidelberg, 1995.
Colección:Springer series in materials science ; 24.
Temas:
Acceso en línea:Texto completo
Descripción
Sumario:Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.
Descripción Física:1 online resource (ix, 216 pages) : 47 illustrations.
Bibliografía:Includes bibliographical references (pages 201-214) and index.
ISBN:9783642975936
3642975933
3540583173
9783540583172
0387583173
9780387583174
ISSN:0933-033X ;