Compound semiconductor bulk materials and characterizations. Volume 2 /

Mostrar otras versiones (1)

Annotation

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Oda, Osamu
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Singapore ; London : World Scientific, ©2012.
Colección:Compound semiconductor bulk materials and characterizations ; v. 2
Temas:
Compound semiconductors > Materials.
Composés semi-conducteurs > Matériaux.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Compound semiconductors > Materials
Acceso en línea:Texto completo
Tabla de Contenidos:
  • PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth.
  • Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth;
  • High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method;
  • Flux method;
  • Ammonothermal method;
  • Other solution growth methods; (3) Vapor phase growth;
  • Physical Vapor Transport (PVT) method;
  • Reaction of Ga with NH3;
  • Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE).
  • Sapphire- NdGa03 (NGO);
  • GaAs; -SiC;
  • Si;
  • GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN;
  • GaN; (2) Structural defects; -BN; -AIN;
  • GaN; (3) Point defects; -BN; -AIN;
  • GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN;
  • GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN.
  • 20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method.
  • 21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. MERCURY COMPOUNDS; 22.1 INTRODUCTION.

Ejemplares similares