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Future Trends in Microelectronics : frontiers and innovations /
Annotation
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Hoboken, New Jersey :
Wiley,
[2013]
|
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Half Title page; Title page; Copyright page; Preface; Acknowledgments; References; Part I: Innovations in Electronics and Systems; Technology Innovation, Reshaping the Microelectronics Industry; 1. Introduction; 2. Mainstream silicon technology: Memory; 3. Mainstream silicon technology: Logic; 4. Emerging computing architectures; 5. Silicon technology in the field of energy; 6. Silicon technology and nitride devices; 7. Silicon technology and photonics; 8. Silicon technology and medical or healthcare applications; 9. Future prospects; Acknowledgments; References.
- Challenges and Limits for Very Low Energy Computation1. Introduction; 2. Results and discussion; 3. Conclusions; Acknowledgments; References; Getting Rid of the DRAM Capacitor; 1. Introduction; 2. Origins of floating-body 1T-DRAMs; 3. Second coming of floating-body 1T-DRAMs; 4. Multi-body FB-1T-DRAMs; 5. Final remarks and conclusions; Acknowledgments; References; Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications; 1. Introduction; 2. Structure and principle of operation of the FED; 3. FED as a memory cell; 3. FED as an ESD protection element.
- 4. ConclusionsAcknowledgments; References; Sharp-Switching CMOS-Compatible Devices with High Current Drive; 1. Introduction; 2. Enhancement of TFET ION using Si1-xGex and Ge channel materials; 3. Bipolar-enhanced TFET: BET-FET; 4. A feedback-based high-current sharp-switching device: Z2-FET; 5. Conclusions; Acknowledgments; References; Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory; 1. Introduction; 2. Magnetic memory technologies; 3. MTJs with a composite free layer; 4. Conclusions; Acknowledgments; References.
- Silicon Carbide High Temperature Electronics
- Is This Rocket Science?1. Introduction; 2. Advantages of SiC electronics; 3. Exploration of Venus; 4. Proposed system for Venus lander; 5. Results; 6. Conclusion; Acknowledgments; References; Microchip Post-Processing: There is Plenty of Room at the Top; 1. Introduction; 2. Adding functionality to CMOS; 3. Emerging microsystems; 4. Conclusions; Acknowledgments; References; EUV Lithography: Today and Tomorrow; 1. Introduction; 2. A very short history of EUVL; 3. Present of EUVL: Update on the current situation; 4. EUVL and alternatives: The future.
- 5. ConclusionsAcknowledgments; References; Manufacturability and Nanoelectronic Performance; 1. Introduction; 2. Manufacturability; 3. Reproducibility of artefacts made by top-down methods; 4. Reproducibility of artefacts made by bottom-up methods; 4. Consequent device performance limits; 5. Epitaxial control of layer thickness; 6. Zeolite pores as wires; 6. Conclusions; Acknowledgments; References; Part II: Optoelectronics in the Nano Age; Ultrafast Nanophotonic Devices for Optical Interconnects; 1. Introduction; 2. Vertical-cavity surface-emitting lasers.