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Guide to State-of-the-Art Electron Devices : an Overview by the Technical Area Committees of the IEEE Electron Devices.

Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Device...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Burghartz, Joachim N.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Wiley, 2013.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Cover; Title Page; Copyright; Contents; Foreword; Preface; Contributors; Acknowledgments; Introduction: Historic Timeline; Part I Basic Electron Devices; Chapter 1 Bipolar Transistors; 1.1 Motivation; 1.2 The pn Junction and its Electronic Applications; 1.3 The Bipolar Junction Transistor and its Electronic Applications; 1.4 Optimization of Bipolar Transistors; 1.5 Silicon-Germanium Heterojunction Bipolar Transistors; References; Chapter 2 MOSFETs; 2.1 Introduction; 2.2 MOSFET Basics; 2.3 The Evolution of MOSFETs; 2.4 Closing Remarks; References; Chapter 3 Memory Devices; 3.1 Introduction.
  • 3.2 Volatile Memories3.3 Non-Volatile Memories; 3.4 Future Perspectives of MOS Memories; 3.5 Closing Remarks; References; Chapter 4 Passive Components; 4.1 Discrete and Integrated Passive Components; 4.2 Application in Analog ICs and DRAM; 4.3 The Planar Spiral Inductor-A Case Study; 4.4 Parasitics in Integrated Circuits; References; Chapter 5 Emerging Devices; 5.1 Non-Charge-Based Switching; 5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics; 5.3 Closing Remarks; References; Part II Aspects of Device and IC Manufacturing.
  • Chapter 6 Electronic Materials6.1 Introduction; 6.2 Silicon Device Technology; 6.3 Compound Semiconductor Devices; 6.4 Electronic Displays; 6.5 Closing Remarks; References; Chapter 7 Compact Modeling; 7.1 The Role of Compact Models; 7.2 Bipolar Transistor Compact Modeling; 7.3 MOS Transistor Compact Modeling; 7.4 Compact Modeling of Passive Components; 7.5 Benchmarking and Implementation; References; Chapter 8 Technology Computer Aided Design; 8.1 Introduction; 8.2 Drift-Diffusion Model; 8.3 Microscopic Transport Models; 8.4 Quantum Transport Models; 8.5 Process and Equipment Simulation.
  • 11.1 Introduction11.2 MOSFET Scaling Trends; 11.3 Low-Power and High-Speed Logic Design; 11.4 Scaling Driven Technology Enhancements; 11.5 Ultra-Low Voltage Transistors; 11.6 Interconnects; 11.7 Memory Design; 11.8 System Integration; References; Chapter 12 Mixed-Signal Technologies and Integrated Circuits; 12.1 Introduction; 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS; 12.3 Data Converter ICs; 12.4 Mixed-Signal Circuits for Low Power Displays; 12.5 Image Sensor Technologies and Circuits; References; Chapter 13 Memory Technologies; 13.1 Semiconductor Memory History.