Guide to State-of-the-Art Electron Devices : an Overview by the Technical Area Committees of the IEEE Electron Devices.

Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Device...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Burghartz, Joachim N.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Wiley, 2013.
Temas:
Electronic apparatus and appliances.
Electronic apparatus and appliances
Acceso en línea:Texto completo

MARC

LEADER 00000cam a2200000Mi 4500
001 EBOOKCENTRAL_ocn830169148
003 OCoLC
005 20240329122006.0
006 m o d
007 cr |n|||||||||
008 130316s2013 nyu o 000 0 eng d
040 |a EBLCP  |b eng  |e pn  |c EBLCP  |d OCLCQ  |d MEAUC  |d K6U  |d OCLCF  |d OCLCO  |d OCLCQ  |d DEBSZ  |d COO  |d OCLCQ  |d MERUC  |d ZCU  |d ICG  |d OCLCQ  |d DKC  |d OCLCQ  |d HS0  |d UHL  |d OCLCQ  |d OCLCO  |d OCLCQ  |d OCLCO 
020 |a 9781118517512 
020 |a 1118517512 
020 |z 9781118347263  |q (hardback) 
029 1 |a AU@  |b 000055879906 
029 1 |a DEBBG  |b BV044173166 
029 1 |a DEBSZ  |b 431344116 
035 |a (OCoLC)830169148 
050 4 |a TK7870 .G83 2013 
082 0 4 |a 621.381 
084 |a TEC008010  |2 bisacsh 
049 |a UAMI 
100 1 |a Burghartz, Joachim N. 
245 1 0 |a Guide to State-of-the-Art Electron Devices :  |b an Overview by the Technical Area Committees of the IEEE Electron Devices. 
260 |a New York :  |b Wiley,  |c 2013. 
300 |a 1 online resource (324 pages) 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
505 0 |a Cover; Title Page; Copyright; Contents; Foreword; Preface; Contributors; Acknowledgments; Introduction: Historic Timeline; Part I Basic Electron Devices; Chapter 1 Bipolar Transistors; 1.1 Motivation; 1.2 The pn Junction and its Electronic Applications; 1.3 The Bipolar Junction Transistor and its Electronic Applications; 1.4 Optimization of Bipolar Transistors; 1.5 Silicon-Germanium Heterojunction Bipolar Transistors; References; Chapter 2 MOSFETs; 2.1 Introduction; 2.2 MOSFET Basics; 2.3 The Evolution of MOSFETs; 2.4 Closing Remarks; References; Chapter 3 Memory Devices; 3.1 Introduction. 
505 8 |a 3.2 Volatile Memories3.3 Non-Volatile Memories; 3.4 Future Perspectives of MOS Memories; 3.5 Closing Remarks; References; Chapter 4 Passive Components; 4.1 Discrete and Integrated Passive Components; 4.2 Application in Analog ICs and DRAM; 4.3 The Planar Spiral Inductor-A Case Study; 4.4 Parasitics in Integrated Circuits; References; Chapter 5 Emerging Devices; 5.1 Non-Charge-Based Switching; 5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics; 5.3 Closing Remarks; References; Part II Aspects of Device and IC Manufacturing. 
505 8 |a Chapter 6 Electronic Materials6.1 Introduction; 6.2 Silicon Device Technology; 6.3 Compound Semiconductor Devices; 6.4 Electronic Displays; 6.5 Closing Remarks; References; Chapter 7 Compact Modeling; 7.1 The Role of Compact Models; 7.2 Bipolar Transistor Compact Modeling; 7.3 MOS Transistor Compact Modeling; 7.4 Compact Modeling of Passive Components; 7.5 Benchmarking and Implementation; References; Chapter 8 Technology Computer Aided Design; 8.1 Introduction; 8.2 Drift-Diffusion Model; 8.3 Microscopic Transport Models; 8.4 Quantum Transport Models; 8.5 Process and Equipment Simulation. 
504 |a ReferencesChapter 9 Reliability of Electron Devices, Interconnects and Circuits; 9.1 Introduction and Background; 9.2 Device Reliability Issues; 9.3 Circuit-Level Reliability Issues; 9.4 Microscopic Approaches to Assuring Reliability of ICs; References; Chapter 10 Semiconductor Manufacturing; 10.1 Introduction; 10.2 Substrates; 10.3 Lithography and Etching; 10.4 Front-End Processing; 10.5 Back-End Processing; 10.6 Process Control; 10.7 Assembly and Test; 10.8 Future Directions; References; Part III Applications Based on Electron Devices; Chapter 11 VLSI Technology and Circuits. 
505 8 |a 11.1 Introduction11.2 MOSFET Scaling Trends; 11.3 Low-Power and High-Speed Logic Design; 11.4 Scaling Driven Technology Enhancements; 11.5 Ultra-Low Voltage Transistors; 11.6 Interconnects; 11.7 Memory Design; 11.8 System Integration; References; Chapter 12 Mixed-Signal Technologies and Integrated Circuits; 12.1 Introduction; 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS; 12.3 Data Converter ICs; 12.4 Mixed-Signal Circuits for Low Power Displays; 12.5 Image Sensor Technologies and Circuits; References; Chapter 13 Memory Technologies; 13.1 Semiconductor Memory History. 
500 |a 13.2 State of Mainstream Semiconductor Memory Today. 
520 |a Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covere. 
588 0 |a Print version record. 
590 |a ProQuest Ebook Central  |b Ebook Central Academic Complete 
650 0 |a Electronic apparatus and appliances. 
650 7 |a Electronic apparatus and appliances  |2 fast 
776 0 8 |i Print version:  |a Burghartz, Joachim N.  |t Guide to State-of-the-Art Electron Devices : An Overview by the Technical Area Committees of the IEEE Electron Devices.  |d New York : Wiley, ©2013  |z 9781118347263 
856 4 0 |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1129774  |z Texto completo 
938 |a EBL - Ebook Library  |b EBLB  |n EBL1129774 
994 |a 92  |b IZTAP 

Ejemplares similares