Cargando…
Chemistry in Microelectronics.
This book is about the chemistry involved in the semiconductor industry, comprising five chapters detailing topics relevant to chip manufacturing, from fundamentals to applications.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
Wiley,
2013.
|
| Colección: | ISTE.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Mu 4500 | ||
|---|---|---|---|
| 001 | EBOOKCENTRAL_ocn830163371 | ||
| 003 | OCoLC | ||
| 005 | 20240329122006.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130316s2013 enk o 000 0 eng d | ||
| 040 | |a EBLCP |b eng |e pn |c EBLCP |d YDXCP |d N$T |d OCLCF |d UKDOC |d OCLCQ |d DEBSZ |d OCLCQ |d MERUC |d ZCU |d ICG |d OCLCQ |d DKC |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
| 020 | |a 9781118580141 |q (electronic bk.) | ||
| 020 | |a 1118580141 |q (electronic bk.) | ||
| 029 | 1 | |a AU@ |b 000055879202 | |
| 029 | 1 | |a DEBBG |b BV044173906 | |
| 029 | 1 | |a DEBSZ |b 431353298 | |
| 035 | |a (OCoLC)830163371 | ||
| 050 | 4 | |a TK7816 | |
| 072 | 7 | |a TEC |x 008060 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008070 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.381 |
| 049 | |a UAMI | ||
| 100 | 1 | |a Le Tiec, Yannick. | |
| 245 | 1 | 0 | |a Chemistry in Microelectronics. |
| 260 | |a London : |b Wiley, |c 2013. | ||
| 300 | |a 1 online resource (386 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a ISTE | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Title Page; Cpntents; Preface; Chapter 1. Chemistry in the "Front End of the Line" (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts; 1.1. Introduction; 1.2. Arrangement of the gate; 1.2.1. Generalities; 1.2.2. Silicon nitriding processes; 1.2.3. The introduction of the High K/metal gate stacks; 1.2.4. Conclusion; 1.3. Chemistry of crystalline materials; 1.3.1. Generalities; 1.3.2. A few basic ideas about epitaxy; 1.3.3. Surface preparation prior to epitaxy; 1.3.4. Low-temperature Si and SiGe growth: the comparison of three precursors (silane, disilane and dichlorosilane). | |
| 505 | 8 | |a 1.3.5. Integration and conclusion1.4. Contact areas between the gate and the "source" and "drain"; 1.4.1. Generalities; 1.4.2. Introduction to the conventional NiSi process for sub-90 nm nodes; 1.4.3. Implications for the SALICIDE process of the recent technology evolutions; 1.4.4. Conclusion; 1.5. General conclusion; 1.6. List of Abbreviations; 1.7. Bibliography; Chapter 2. Chemistry in Interconnects; 2.1. Introduction; 2.2. Interconnects: generalities and background; 2.2.1. What conditions are required for an interconnect?; 2.2.2. The main technological advancements; 2.2.3. Conclusion. | |
| 505 | 8 | |a 2.3. Dielectric deposits2.3.1. Dielectric generalities; 2.3.2. Interline dielectrics; 2.3.3. Barrier dielectrics; 2.3.4. Conclusion; 2.4. Deposition and properties of metal layers for interconnect structures; 2.4.1. The manufacture of interconnect structures; 2.4.2. The chemistry of materials and functional properties; 2.4.3. The chemistry of interfaces; 2.4.4. The chemistry of metal deposition processes; 2.4.5. Conclusion; 2.5. Cleaning process for copper interconnects; 2.5.1. Introduction; 2.5.2. Impact of corrosion in microelectronics; 2.5.3. Electrochemical diagnostic tools. | |
| 505 | 8 | |a 2.5.4. Equipment for cleaning copper interconnections2.6. General conclusions and perspectives; 2.7. List of Abbreviations; 2.8. Bibliography; Chapter 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying; 3.1. Introduction; 3.2. Cleaning; 3.2.1. Ammonium hydrogen peroxide mixture (APM); 3.2.2. Hydrochloric acid hydrogen peroxide mixture (HPM); 3.2.3. Sulfuric acid hydrogen peroxide mixture (SPM); 3.3. Wet etching; 3.3.1. Hydrofluoric acid (HF); 3.3.2. Buffered oxide etchant or BOE (HF/NH4F); 3.4. Rinsing and drying; 3.4.1. Ultrapure water (UPW); 3.4.2. Drying. | |
| 505 | 8 | |a 3.5. Conclusion3.6. List of Abbreviations; 3.7. Bibliography; Chapter 4. The Use and Management of Chemical Fluids in Microelectronics; 4.1. Ultrapure water; 4.1.1. Parameters of UPW; 4.1.2. UPW system unit operations; 4.1.3. Fundamentals; 4.1.4. Future trends; 4.2. Gases for semiconductors; 4.2.1. Main gases used in the semiconductor fabrication process; 4.2.2. Gas quality requirements for semiconductor fabrication; 4.2.3. Implementation of gases used in the manufacturing of semiconductors; 4.2.4. Conclusion; 4.3. Dissolved gases; 4.3.1. DI-O3; 4.3.2. DI-CO2; 4.3.3. DO. | |
| 500 | |a 4.4. High-purity chemicals. | ||
| 520 | |a This book is about the chemistry involved in the semiconductor industry, comprising five chapters detailing topics relevant to chip manufacturing, from fundamentals to applications. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Microelectronics. | |
| 650 | 6 | |a Microélectronique. | |
| 650 | 7 | |a microelectronics. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Digital. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Microelectronics. |2 bisacsh | |
| 650 | 7 | |a Microelectronics |2 fast | |
| 758 | |i has work: |a Chemistry in microelectronics (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGRjGkXMXVMxYXyP7dwmYd |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Le Tiec, Yannick. |t Chemistry in Microelectronics. |d London : Wiley, ©2013 |z 9781848214361 |
| 830 | 0 | |a ISTE. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1138976 |z Texto completo |
| 938 | |a 123Library |b 123L |n 93882 | ||
| 938 | |a EBL - Ebook Library |b EBLB |n EBL1138976 | ||
| 938 | |a EBSCOhost |b EBSC |n 545295 | ||
| 938 | |a YBP Library Services |b YANK |n 9984916 | ||
| 994 | |a 92 |b IZTAP | ||