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Semiconductor laser engineering, reliability and diagnostics : a practical approach to high power and single mode devices /
"This reference book provides a fully integrated novel approach to the development of high power, single transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering (Part 1), reliability engineering (Part 2) and device diagnostics (Part 3) in the sam...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Chichester, West Sussex, U.K. :
John Wiley & Sons Inc.,
2013.
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| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Semiconductor Laser Engineering, Reliability and Diagnostics; Contents; Preface; About the author; PART 1 DIODE LASER ENGINEERING; Overview; 1 Basic diode laser engineering principles; Introduction; 1.1 Brief recapitulation; 1.1.1 Key features of a diode laser; 1.1.1.1 Carrier population inversion; 1.1.1.2 Net gain mechanism; 1.1.1.3 Optical resonator; 1.1.1.4 Transverse vertical confinement; 1.1.1.5 Transverse lateral confinement; 1.1.2 Homojunction diode laser; 1.1.3 Double-heterostructure diode laser; 1.1.4 Quantum well diode laser.
- 1.1.4.1 Advantages of quantum well heterostructures for diode lasersWavelength adjustment and tunability; Strained quantum well lasers; Optical power supply; Temperature characteristics; 1.1.5 Common compounds for semiconductor lasers; 1.2 Optical output power
- diverse aspects; 1.2.1 Approaches to high-power diode lasers; 1.2.1.1 Edge-emitters; 1.2.1.2 Surface-emitters; 1.2.2 High optical power considerations; 1.2.2.1 Laser brightness; 1.2.2.2 Laser beam quality factor M2; 1.2.3 Power limitations; 1.2.3.1 Kinks; 1.2.3.2 Rollover; 1.2.3.3 Catastrophic optical damage; 1.2.3.4 Aging.
- 1.3.4.3 Cavity length dependence1.3.4.4 Active layer thickness dependence; 1.3.5 Transverse vertical and transverse lateral modes; 1.3.5.1 Vertical confinement structures
- summary; Double-heterostructure; Single quantum well; Strained quantum well; Separate confinement heterostructure SCH and graded-index SCH (GRIN-SCH); Multiple quantum well (MQW); 1.3.5.2 Lateral confinement structures; Gain-guiding concept and key features; Weakly index-guiding concept and key features; Strongly index-guiding concept and key features; 1.3.5.3 Near-field and far-field pattern.
- 1.3.6 Fabry-Pérot longitudinal modes1.3.7 Operating characteristics; 1.3.7.1 Optical output power and efficiency; 1.3.7.2 Internal efficiency and optical loss measurements; 1.3.7.3 Temperature dependence of laser characteristics; 1.3.8 Mirror reflectivity modifications; 1.4 Laser fabrication technology; 1.4.1 Laser wafer growth; 1.4.1.1 Substrate specifications and preparation; 1.4.1.2 Substrate loading; 1.4.1.3 Growth; 1.4.2 Laser wafer processing; 1.4.2.1 Ridge waveguide etching and embedding; 1.4.2.2 The p-type electrode; 1.4.2.3 Ridge waveguide protection.