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Silicon Technologies : Ion Implantation and Thermal Treatment.
The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
Wiley,
2013.
|
| Colección: | ISTE.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 003 | OCoLC | ||
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| 008 | 130223s2013 enk o 000 0 eng d | ||
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| 020 | |a 9781118601112 | ||
| 020 | |a 1118601114 | ||
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| 029 | 1 | |a DEBSZ |b 43133935X | |
| 035 | |a (OCoLC)828298716 | ||
| 050 | 4 | |a TK7871.85 .S5485 2011 | |
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| 049 | |a UAMI | ||
| 100 | 1 | |a Baudrant, Annie. | |
| 245 | 1 | 0 | |a Silicon Technologies : |b Ion Implantation and Thermal Treatment. |
| 260 | |a London : |b Wiley, |c 2013. | ||
| 300 | |a 1 online resource (357 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a ISTE | |
| 588 | 0 | |a Print version record. | |
| 500 | |a 2.2.3. Mass analysis and beam optics. | ||
| 505 | 0 | |a Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case | |
| 505 | 8 | |a 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL | |
| 505 | 8 | |a 1.7.4. Determination of the oxidation parameters from experimental results1.7.5. Confrontation of the Deal and Grove theory with experimental results; 1.7.6. Conclusions on the Deal and Grove theory; 1.8. Theory of thermal oxidation under water vapor of silicon; 1.8.1. Concentration profiles expected for H2O; 1.8.2. Concentration profiles expected for the OH groups; 1.8.3. Concentration profiles expected for H2; 1.8.4. Concentration profiles expected for H; 1.8.5. Comparison of the expected and the experimental profiles; 1.8.6. Wolters theory | |
| 505 | 8 | |a 1.9. Kinetics of growth in O2 for oxide films < 30 nm1.9.1. Introduction; 1.9.2. Oxidation models of thin films; 1.9.3. Case of ultra-thin films (< 5 nm); 1.9.4. On line simulator; 1.9.5. Kinetics and models of SiC oxidation; 1.10. Fluctuations of the oxidation constants under experimental conditions; 1.10.1. Role of the pressure; 1.10.2. Role of the temperature; 1.10.3. Role of the crystal direction; 1.10.4. Role of doping; 1.11. Conclusion; 1.12. Bibliography; Chapter 2. Ion Implantation; 2.1. Introduction; 2.2. Ion implanters; 2.2.1. General description; 2.2.2. Ion sources | |
| 520 | |a The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Semiconductor doping. | |
| 650 | 0 | |a Ion implantation. | |
| 650 | 0 | |a Semiconductors |x Heat treatment. | |
| 650 | 4 | |a Ion implantation. | |
| 650 | 4 | |a Semiconductor doping. | |
| 650 | 4 | |a Semiconductors |x Heat treatment. | |
| 650 | 6 | |a Semi-conducteurs |x Dopage. | |
| 650 | 6 | |a Ions |x Implantation. | |
| 650 | 6 | |a Semi-conducteurs |x Traitement thermique. | |
| 650 | 7 | |a Ion implantation |2 fast | |
| 650 | 7 | |a Semiconductor doping |2 fast | |
| 650 | 7 | |a Semiconductors |x Heat treatment |2 fast | |
| 758 | |i has work: |a Silicon technologies (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGR3pDKCQPWrKFjGh7tKbd |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Baudrant, Annie. |t Silicon Technologies : Ion Implantation and Thermal Treatment. |d London : Wiley, ©2013 |z 9781848212312 |
| 830 | 0 | |a ISTE. | |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1124704 |z Texto completo |
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| 938 | |a EBL - Ebook Library |b EBLB |n EBL1124704 | ||
| 938 | |a YBP Library Services |b YANK |n 10197074 | ||
| 994 | |a 92 |b IZTAP | ||