Molecular Beam Epitaxy : From Research to Mass Production.

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This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to&#...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Henini, Mohamed
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Burlington : Elsevier Science, 2013.
Temas:
Molecular beam epitaxy.
Optoelectronic devices > Materials.
Semiconductors > Materials.
Épitaxie par jets moléculaires.
Dispositifs optoélectroniques > Matériaux.
Semi-conducteurs > Matériaux.
Molecular beam epitaxy
Optoelectronic devices > Materials
Semiconductors > Materials
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1
  • Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2
  • Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS.
  • 2.5 CONCLUSIONSREFERENCES; Chapter 3
  • Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4
  • Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES.
  • 4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5
  • Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6
  • MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM.
  • 6.3 SCATTERING MECHANISMS IN 2D ELECTRON SYSTEM6.4 DESIGN OF HIGH-MOBILITY 2DEG STRUCTURES; 6.5 MBE PROCESS FOR HIGH-MOBILITY 2DEG; 6.6 MOBILITY AND DISORDER IN 2D ELECTRON SYSTEMS; 6.7 CONCLUSIONS; REFERENCES; Chapter 7
  • Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties; 7.1 INTRODUCTION; 7.2 GROWTH OF GAASBI; 7.3 SURFACE STUDIES OF BI-TERMINATED GAAS; 7.4 PHOTOLUMINESCENCE CHARACTERISATION; 7.5 CLUSTERING EFFECTS AND LUMINESCENCE DYNAMICS; 7.6 CARRIER TRAPPING IN GAAS1-XBIX/GAAS LIGHT-EMITTING DIODES; 7.7 INFLUENCE OF BAND STRUCTURE ON DEVICE PERFORMANCE.
  • 7.8 CONCLUSIONSACKNOWLEDGEMENTS; REFERENCES; Chapter 8
  • Molecular beam epitaxy of GaAsBi and related quaternary alloys; 8.1 EARLY DAYS OF CRYSTAL GROWTH OF BI-CONTAINING III-V SEMICONDUCTORS; 8.2 MBE GROWTH OF GAAS1-XBIX; 8.3 MBE GROWTH OF GANYAS1-X-YBIX; 8.4 MBE GROWTH OF INYGA1-YAS1-XBIX; 8.5 SUMMARY; REFERENCES; Chapter 9
  • MBE of dilute-nitride optoelectronic devices; 9.1 INTRODUCTION; 9.2 EPITAXY OF DILUTE-NITRIDE ALLOYS BY RF-PLASMA-ASSISTED MBE; 9.3 DILUTE-NITRIDE HETEROSTRUCTURES FOR DEVICE APPLICATIONS; 9.4 CONCLUSIONS AND FUTURE OUTLOOK; ACKNOWLEDGEMENTS; REFERENCES.
  • Chapter 10
  • Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy.

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