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EBOOKCENTRAL_ocn815568138 |
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OCoLC |
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20240329122006.0 |
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121012s2006 xx o 000 0 eng d |
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|a 1281347566
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|a 9781281347565
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|a 9781860949098
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|a (OCoLC)815568138
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|a TGM
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|a 620.193
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|a UAMI
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|a Silicon Carbide Microelectromechanical Systems For Harsh Environments.
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|b World Scientific
|c 2006.
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|a 1 online resource
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|a text
|b txt
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|a This unique book describes the science and technology of silicon carbide (SiC) microelectromechanical systems (MEMS), from the creation of SiC material to the formation of final system, through various expert contributions by several leading key figures in the field. The book contains high-quality up-to-date scientific information concerning SiC MEMS for harsh environments summarized concisely for students, academics, engineers and researchers in the field of SiC MEMS. This is the only book that addresses in a comprehensive manner the main advantages of SiC as a MEMS material for applications in high temperature and harsh environments, as well as approaches to the relevant technologies, with a view progressing towards the final product.
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|a Preface ; 1 Introduction to Silicon Carbide (SiC) Microelectromechanical Systems (MEMS) ; 1 Introduction ; 2 SiC Material Properties ; 3 Making a Microelectromechanical (MEM) Device ; 3.1 Micromachining Processes ; 3.1.1 Bulk micromachining ; 3.1.2 Surface micromachining.
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|a 4 Surface Modification 5 Frequency Tuning of the SiC MEMS ; 6 Mechanical Testing of the MEMS ; 7 Application Examples ; 8 Summary ; References ; 2 Deposition Techniques for SiC MEMS ; 1 Introduction ; 2 Deposition Issues Related to SiC for MEMS.
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|a 3 Atmospheric Pressure Chemical Vapor Deposition 3.1 Epitaxial 3C-SiC Films ; 3.2 Polycrystalline 3C-SiC Films ; 4 Plasma Enhanced Chemical Vapor Deposition ; 5 Low Pressure Chemical Vapor Deposition ; 5.1 Overview ; 5.2 Epitaxial 3C-SiC Films ; 5.3 Polycrystalline 3C-SiC Films.
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|a 6 Doping ofLPCVDPoly-SiC Films 7 Other Deposition Methods ; 8 Conclusions ; References ; 3 Review of Issues Pertaining to the Development of Contacts to Silicon Carbide: 1996 -- 2002 ; 1 Introduction ; 2 Thermal Stability ; 2.1 Thermal Stability of Ohmic Contacts.
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|a 2.2 Thermal Stability of Rectifying Contacts 3 Ohmic Contacts to p-type SiC ; 3.1 Introduction ; 3.2 Al-based Contacts ; 3.3 Al-free Contacts ; 4 Ohmic Contacts Using Nickel ; 4.1 Introduction ; 4.2 Thermodynamics ; 4.3 Phase Formation Sequence ; 4.4 Issues ; 4.5 Mechanisms.
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590 |
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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650 |
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|a Microelectromechanical systems.
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650 |
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|a Silicon carbide.
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650 |
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2 |
|a Micro-Electrical-Mechanical Systems
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650 |
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6 |
|a Microsystèmes électromécaniques.
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650 |
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7 |
|a Microelectromechanical systems
|2 fast
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650 |
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|a Silicon carbide
|2 fast
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700 |
1 |
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|a Cheung, Rebecca.
|4 edt
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720 |
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|a Razavy, Mohsen.
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758 |
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|i has work:
|a Silicon carbide micro electromechanical systems for harsh environments (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCGftRf4x3rw7jKFryPpgcd
|4 https://id.oclc.org/worldcat/ontology/hasWork
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856 |
4 |
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|u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=1681715
|z Texto completo
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938 |
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|a EBL - Ebook Library
|b EBLB
|n EBL1681715
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|a ProQuest MyiLibrary Digital eBook Collection
|b IDEB
|n 134756
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994 |
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|a 92
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