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High-k gate dielectrics for CMOS technology /
"A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Weinheim :
Wiley-VCH,
2012.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 050 | 4 | |a QC585 |b .H54 2012 | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
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| 245 | 0 | 0 | |a High-k gate dielectrics for CMOS technology / |c edited by Gang He and Zhaoqi Sun. |
| 260 | |a Weinheim : |b Wiley-VCH, |c 2012. | ||
| 300 | |a 1 online resource (xxxi, 558 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a text file |2 rdaft | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development. | |
| 505 | 8 | |a 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates. | |
| 505 | 8 | |a 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation. | |
| 505 | 8 | |a 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4). | |
| 505 | 8 | |a 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films. | |
| 520 | |a "A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering."-- |c Provided by publisher. | ||
| 588 | 0 | |a Print version record. | |
| 546 | |a English. | ||
| 590 | |a ProQuest Ebook Central |b Ebook Central Academic Complete | ||
| 650 | 0 | |a Dielectrics. | |
| 650 | 0 | |a Metal oxide semiconductors, Complementary. | |
| 650 | 6 | |a Diélectriques. | |
| 650 | 6 | |a MOS complémentaires. | |
| 650 | 7 | |a dielectric properties. |2 aat | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Dielectrics |2 fast | |
| 650 | 7 | |a Metal oxide semiconductors, Complementary |2 fast | |
| 700 | 1 | |a He, Gang |c (Professor of physics) |1 https://id.oclc.org/worldcat/entity/E39PCjyGbCqPcd9mJJpkGKWmtX | |
| 700 | 1 | |a Sun, Zhaoqi |c (Professor of physics) |1 https://id.oclc.org/worldcat/entity/E39PCjvFycfckWTq4KVtcRTwVK | |
| 758 | |i has work: |a High-k gate dielectrics for CMOS technology (Text) |1 https://id.oclc.org/worldcat/entity/E39PCGmgTyCK8dxYYVj4phCprq |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |t High-k gate dielectrics for CMOS technology. |d Weinheim : |b Wiley-VCH, ©2012 |z 9783527330324 |w (OCoLC)785081747 |
| 856 | 4 | 0 | |u https://ebookcentral.uam.elogim.com/lib/uam-ebooks/detail.action?docID=956000 |z Texto completo |
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