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|a 9781608050529
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|a UAMI
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|a Li, Jianye.
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|a Advances in III-V Semiconductor Nanowires and Nanodevices.
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|a Sharjah :
|b Bentham Science Publishers,
|c 2011.
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|a 1 online resource (186 pages)
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|a text
|b txt
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|a 01 Title.pdf; 02 Cover page; 03 eBooks End User License Agreement-Website; 05 Foreword; 06 Preface; 07 Contributors; 09 Chapter 1-Revision; 10 Chapter 2-Revision; 11 Chapter 3-Revision; 12 Chapter 4-Revision; 13 Chapter 5-Revision; 14 Chapter 6-Revision; 15 Chapter 7-Revision; 16 Chapter 8-Revision; 17 Chapter 9-Revision; 18 Author Index; 19 Subject Index.
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|a Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevices is an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary a.
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|a Print version record.
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|a ProQuest Ebook Central
|b Ebook Central Academic Complete
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|a Semiconductors.
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|a Semiconductors
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|a Semi-conducteurs.
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|a semiconductor.
|2 aat
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|a Semiconductors
|2 fast
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|a Wang, Deli.
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|a LaPierre, Ray R.
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758 |
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|i has work:
|a Advances in III-V semiconductor nanowires and nanodevices (Text)
|1 https://id.oclc.org/worldcat/entity/E39PD3d9TTgD7PWdrD9jYkgwcq
|4 https://id.oclc.org/worldcat/ontology/hasWork
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|i Print version:
|a Li, Jianye.
|t Advances in III-V Semiconductor Nanowires and Nanodevices.
|d Sharjah : Bentham Science Publishers, ©2011
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