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Nonlinear transistor model parameter extraction techniques /
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cambridge, UK ; New York :
Cambridge University Press,
2012.
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| Colección: | Cambridge RF and microwave engineering series.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; Nonlinear Transistor Model Parameter Extraction Techniques; The Cambridge RF and Microwave Engineering Series; Title; Copyright; Contents; List of contributors; Preface; 1 Introduction; 1.1 Model extraction challenges; 1.1.1 Accuracy; 1.1.1.1 Circuit application; 1.1.1.2 Measurement uncertainty; 1.1.1.3 Process variations; 1.1.2 Numerical convergence; 1.1.2.1 Breakdown; 1.1.2.2 Self-heating; 1.1.3 Choice of the modeling transistor; 1.2 Model extraction workflow; References; 2 DC and thermal modeling: III
- V FETs and HBTs; 2.1 Introduction; 2.2 Basic DC characteristics.
- 2.3 FET DC parameters and modeling2.4 HBT DC parameters and modeling; 2.5 Process control monitoring; 2.6 Thermal modeling overview; 2.7 Physics-based thermal scaling model for HBTs; 2.8 Measurement-based thermal model for FETs; 2.9 Transistor reliability evaluation; Acknowledgments; References; 3 Extrinsic parameter and parasitic elements in III
- V HBT and HEMT modeling; 3.1 Introduction; 3.2 Test structures with calibration and de-embedding; 3.3 Methods for extrinsic parameter extraction used in HBTs; 3.3.1 Equivalent circuit topology.
- 3.3.2 Physical description of contact resistances and overlap capacitances3.3.3 Extrinsic resistance and inductance extraction; 3.4 Methods for extrinsic parameter extraction used in HEMTs; 3.4.1 Cold FET technique; 3.4.2 Unbiased technique; 3.4.3 GaN HEMTs exceptions; 3.5 Scaling for multicell arrays; References; 4 Uncertainties in small-signal equivalent circuit modeling; 4.1 Introduction; 4.1.1 Sources of uncertainty in modeling; 4.1.2 Measurement uncertainty; 4.2 Uncertainties in direct extraction methods; 4.2.1 Simple direct extraction example; 4.2.1.1 Example circuit and measurements.
- 4.2.1.2 Uncertainty analysis4.2.1.3 Parameter estimation; 4.2.1.4 Parameter correlations; 4.2.2 Results using transistor measurements; 4.2.2.1 Uncertainty contributions; 4.2.2.2 Intrinsic model parameter sensitivities; 4.2.2.3 Intrinsic model parameter uncertainties; 4.2.2.4 Multibias extraction results; 4.3 Optimizer-based estimation techniques; 4.3.1 Maximum likelihood estimation; 4.3.1.1 Simple example; 4.3.1.2 MLE uncertainty; 4.3.2 MLE of small-signal transistor model parameters; 4.3.2.1 Parasitic parameter estimation; 4.3.2.2 Application to parasitic FET model extraction.
- 4.3.2.3 MLE of intrinsic model parameters4.3.2.4 Application to intrinsic FET model extraction; 4.3.3 Comparison between MLE and the direct extraction method; 4.3.4 Application of MLE in RF-CMOS de-embedding; 4.3.4.1 Method description; 4.3.4.2 Example using 130 nm RF-CMOS measurements; 4.3.4.3 Comparison between different de-embedding methods; 4.3.5 Discussion; 4.4 Complexity versus uncertainty in equivalent circuit modeling; 4.4.1 Finding an optimum model topology; 4.4.2 An illustrative example; 4.4.2.1 MSE estimation procedure; 4.4.2.2 Results; 4.5 Summary and discussion; References.