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Terahertz sensing technology /

The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array o...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Woolard, Dwight L., Loerop, William R., Shur, Michael
Formato: Electrónico eBook
Idioma:Inglés
Publicado: River Edge, N.J. : World Scientific, ©2003.
Colección:Selected topics in electronics and systems ; v. 30.
Selected topics in electronics and systems ; v. 32.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Preface; CONTENTS; THz Technology: An Overview; 1. Introduction; 2. Background; 3. THz Applications; 4. THz Components; 5. Future Applications and Concluding Remarks; References; Two-Terminal Active Devices for Terahertz Sources; 1. Introduction; 2. Two-terminal NDR devices as oscillators; 3. Fabrication technologies and oscillator circuits; 4. Basic properties of two-terminal solid-state NDR devices; 5. Noise performance of solid-state two-terminal NDR devices; 6. Vacuum TUNNETT devices; 7. Basic properties of the BT3D; 8. Summary and conclusions; References.
  • Multiplier and Harmonic Generator Technologies for Terahertz Applications1. Introduction; 2. Overview; 3. Frequency Doublers; 4. Frequency Triplers; 5. Higher Order Multipliers; 6. Distributed Frequency Multipliers; 7. Terahertz Sideband Generators; 8. Summary; References; Submicron InP-based HBTs for Ultra-high Frequency Amplifiers; 1. Introduction; 2. HBT Scaling; 3. Transferred-substrate HBTs; 4. High Frequency Device Measurements; 5. Device Results; 6. HBT Amplifiers; 7. Conclusions; References; THz Generation by Photomixing in Ultrafast Photoconductors; I. Introduction.
  • II. Photomixer TechnologyIII. Photomixing Theory; IV. Experimental Results/Comparison with Theory; V. Improved Photomixers; VI. Applications; VII. Conclusion and acknowledgements; References; Silicon-Germanium Quantum-Cascade Lasers; 1. Introduction; 2. Advantages and disadvantages of SiGe for intersubband lasers; 3. Advantages of the relaxed SiGe-on-Si virtual substrate; 4. Theory and simulation techniques; 5. Surface emitting SiGe QCLs; 6. Edge emitting Si/SiGe QCLs; 7. Superlattice SiGe QCLs and quantum-parallel lasers; 8. Other SiGe laser ideas: the phonon-pumped laser (PPL).
  • 9. Experimental progress to date10. Prospects for Si-based optoelectronic THz chips; 11. Summary; References; Plasma Wave Electronics; 1. Introduction; 2. Plasma Wave Oscillations; 3. Plasma Waves in FETs; 4. Plasma wave instability; 5. Instability conditions; 6. Detectors and mixers of terahertz radiation; 7. Terahertz phoromixing using resonant excitation of plasma oscillations; Conclusions; References; T-Ray Sensing and Imaging; 1. Introduction; 2. Continuous-wave Terahertz Systems; 3. Pulsed T-ray Spectrometers; 4. Sensing; 5. Imaging; 6. Conclusion; References.
  • Multistatic Reflection Imaging with Terahertz Pulses1. Introduction; 2. THz Time-domain Spectrometer; 3. Two Dimensional Migration; 4. Resolution of reconstructed images; 5. Velocity estimation with semblance; 6. Conclusions; References.